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Kaganer

Showing results (21-30 of 36) with videos related to

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Nanotechnology|May 5, 2017
Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic propertiesOliver Marquardt, Thilo Krause, Vladimir Kaganer, et al.
Nano Letters|May 12, 2016
Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire CoalescenceVladimir M Kaganer, Sergio Fernández-Garrido, Pinar Dogan, et al.
Nanoscale Advances|September 22, 2022
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)Roman Volkov, Nikolai I Borgardt, Oleg V Konovalov, et al.
Trudy Instituta Imeni Pastera|January 1, 1978
[Characteristics of colienteritis 0111 in Leningrad]N V Safonova, N K Golutva, N I Bogolapova, et al.
Zhurnal Mikrobiologii, Epidemiologii I Immunobiologii|November 1, 1986
[Current aspects of the short-term prognosis of meningococcal infection morbidity for the sake of epidemiological surveillance]R Kh Iafaev, V V Dudareva, T G Ivanova, et al.
Nanotechnology|February 6, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowiresM Oliva, V Kaganer, M Pudelski, et al.
Acta Crystallographica. Section A, Foundations of Crystallography|December 22, 2011
X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius filmsV S Kopp, V M Kaganer, J Schwarzkopf, et al.
Nanotechnology|October 21, 2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescenceS Fernández-Garrido, V M Kaganer, C Hauswald, et al.
Nano Letters|June 14, 2013
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxySergio Fernández-Garrido, Vladimir M Kaganer, Karl K Sabelfeld, et al.
Journal of Applied Crystallography|April 10, 2023
X-ray scattering study of GaN nanowires grown on Ti/Al<sub>2</sub>O<sub>3</sub> by molecular beam epitaxyVladimir M Kaganer, Oleg V Konovalov, Gabriele Calabrese, et al.
Pageof 4

Showing results (21-30 of 36) with videos related to

Sort By:
Pageof 4
Nanotechnology|May 5, 2017
Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic propertiesOliver Marquardt, Thilo Krause, Vladimir Kaganer, et al.
Nano Letters|May 12, 2016
Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire CoalescenceVladimir M Kaganer, Sergio Fernández-Garrido, Pinar Dogan, et al.
Nanoscale Advances|September 22, 2022
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)Roman Volkov, Nikolai I Borgardt, Oleg V Konovalov, et al.
Trudy Instituta Imeni Pastera|January 1, 1978
[Characteristics of colienteritis 0111 in Leningrad]N V Safonova, N K Golutva, N I Bogolapova, et al.
Zhurnal Mikrobiologii, Epidemiologii I Immunobiologii|November 1, 1986
[Current aspects of the short-term prognosis of meningococcal infection morbidity for the sake of epidemiological surveillance]R Kh Iafaev, V V Dudareva, T G Ivanova, et al.
Nanotechnology|February 6, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowiresM Oliva, V Kaganer, M Pudelski, et al.
Acta Crystallographica. Section A, Foundations of Crystallography|December 22, 2011
X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius filmsV S Kopp, V M Kaganer, J Schwarzkopf, et al.
Nanotechnology|October 21, 2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescenceS Fernández-Garrido, V M Kaganer, C Hauswald, et al.
Nano Letters|June 14, 2013
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxySergio Fernández-Garrido, Vladimir M Kaganer, Karl K Sabelfeld, et al.
Journal of Applied Crystallography|April 10, 2023
X-ray scattering study of GaN nanowires grown on Ti/Al<sub>2</sub>O<sub>3</sub> by molecular beam epitaxyVladimir M Kaganer, Oleg V Konovalov, Gabriele Calabrese, et al.
Pageof 4