Search research articles
Contact Us
Filters
Showing results (21-30 of 36) with videos related to
Page
of 4
Sort By:
Nanotechnology
|
May 5, 2017
Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties
Oliver Marquardt, Thilo Krause, Vladimir Kaganer, et al.
Nano Letters
|
May 12, 2016
Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence
Vladimir M Kaganer, Sergio Fernández-Garrido, Pinar Dogan, et al.
Nanoscale Advances
|
September 22, 2022
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
Roman Volkov, Nikolai I Borgardt, Oleg V Konovalov, et al.
Trudy Instituta Imeni Pastera
|
January 1, 1978
[Characteristics of colienteritis 0111 in Leningrad]
N V Safonova, N K Golutva, N I Bogolapova, et al.
Zhurnal Mikrobiologii, Epidemiologii I Immunobiologii
|
November 1, 1986
[Current aspects of the short-term prognosis of meningococcal infection morbidity for the sake of epidemiological surveillance]
R Kh Iafaev, V V Dudareva, T G Ivanova, et al.
Nanotechnology
|
February 6, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowires
M Oliva, V Kaganer, M Pudelski, et al.
Acta Crystallographica. Section A, Foundations of Crystallography
|
December 22, 2011
X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films
V S Kopp, V M Kaganer, J Schwarzkopf, et al.
Nanotechnology
|
October 21, 2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S Fernández-Garrido, V M Kaganer, C Hauswald, et al.
Nano Letters
|
June 14, 2013
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M Kaganer, Karl K Sabelfeld, et al.
Journal of Applied Crystallography
|
April 10, 2023
X-ray scattering study of GaN nanowires grown on Ti/Al<sub>2</sub>O<sub>3</sub> by molecular beam epitaxy
Vladimir M Kaganer, Oleg V Konovalov, Gabriele Calabrese, et al.
Page
of 4
Search research articles
Search
Showing results (21-30 of 36) with videos related to
Sort By:
Page
of 4
Nanotechnology
|
May 5, 2017
Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties
Oliver Marquardt, Thilo Krause, Vladimir Kaganer, et al.
Nano Letters
|
May 12, 2016
Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence
Vladimir M Kaganer, Sergio Fernández-Garrido, Pinar Dogan, et al.
Nanoscale Advances
|
September 22, 2022
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
Roman Volkov, Nikolai I Borgardt, Oleg V Konovalov, et al.
Trudy Instituta Imeni Pastera
|
January 1, 1978
[Characteristics of colienteritis 0111 in Leningrad]
N V Safonova, N K Golutva, N I Bogolapova, et al.
Zhurnal Mikrobiologii, Epidemiologii I Immunobiologii
|
November 1, 1986
[Current aspects of the short-term prognosis of meningococcal infection morbidity for the sake of epidemiological surveillance]
R Kh Iafaev, V V Dudareva, T G Ivanova, et al.
Nanotechnology
|
February 6, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowires
M Oliva, V Kaganer, M Pudelski, et al.
Acta Crystallographica. Section A, Foundations of Crystallography
|
December 22, 2011
X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films
V S Kopp, V M Kaganer, J Schwarzkopf, et al.
Nanotechnology
|
October 21, 2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S Fernández-Garrido, V M Kaganer, C Hauswald, et al.
Nano Letters
|
June 14, 2013
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M Kaganer, Karl K Sabelfeld, et al.
Journal of Applied Crystallography
|
April 10, 2023
X-ray scattering study of GaN nanowires grown on Ti/Al<sub>2</sub>O<sub>3</sub> by molecular beam epitaxy
Vladimir M Kaganer, Oleg V Konovalov, Gabriele Calabrese, et al.
Page
of 4