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The Review of Scientific Instruments|May 3, 2013
Comparison of modified driver circuit and capacitor-transfer circuit in longitudinally excited N2 laserKazuyuki Uno, Tetsuya Akitsu, Kenshi Nakamura, et al.
Journal of Nanoscience and Nanotechnology|July 26, 2016
Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film TransistorsHideto Shibao, Yoshio Nakahara, Kazuyuki Uno, et al.
The Review of Scientific Instruments|July 8, 2008
Longitudinally excited N(2) lasers without high-voltage switchesKazuyuki Uno, Kenshi Nakamura, Tatsumi Goto, et al.
The Review of Scientific Instruments|May 1, 2017
Longitudinally excited N<sub>2</sub> laser with large-diameter discharge tubeHiroaki Tsushima, Kazuyuki Uno, Tetsuya Akitsu, et al.
Journal of Nanoscience and Nanotechnology|July 26, 2016
High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric LayersYu Matsuda, Yoshio Nakahara, Daisuke Michiura, et al.
Physical Review Letters|May 7, 2003
Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopyVincenzo Lordi, Vincent Gambin, Stephan Friedrich, et al.
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