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Kendelewicz

Showing results (1-10 of 39) with videos related to

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Physical Review. B, Condensed Matter|December 15, 1989
Si(111) 2 x 1 surface core-level shifts investigated by use of Ge overlayerWoicik, Pianetta, Kendelewicz
Physical Review. B, Condensed Matter|December 15, 1989
Alkali-metal-induced interface resonant state on a semiconductor surfaceSoukiassian, Kendelewicz, Hurych
Physical Review. B, Condensed Matter|February 15, 1992
Fermi-level pinning on ideally terminated InP(110) surfacesYamada, Wahi, Kendelewicz, et al.
Physical Review. B, Condensed Matter|November 15, 1986
Au-GaAs(110) interface: Photoemission studies of the effects of temperaturePetro, Kendelewicz, Lindau, et al.
Physical Review. B, Condensed Matter|April 15, 1987
Erratum: Au-GaAs(110) interface: Photoemission studies of the effects of temperaturePetro, Kendelewicz, Lindau, et al.
Physical Review. B, Condensed Matter|July 15, 1986
Binding-energy shifts from alloying at metal-compound-semiconductor interfacesNogami, Kendelewicz, Lindau, et al.
Physical Review. B, Condensed Matter|August 15, 1990
Room-temperature nitridation of gallium arsenide using alkali metal and molecular nitrogenSoukiassian, Starnberg, Kendelewicz, et al.
Physical Review. B, Condensed Matter|October 15, 1987
Physical nature of the InP near-surface defect acceptor and donor statesChin, Cao, Kendelewicz, et al.
Physical Review. B, Condensed Matter|May 15, 1985
Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP(110)Kendelewicz, Williams, Petro, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfacesKendelewicz, Williams, Petro, et al.
Pageof 4

Showing results (1-10 of 39) with videos related to

Sort By:
Pageof 4
Physical Review. B, Condensed Matter|December 15, 1989
Si(111) 2 x 1 surface core-level shifts investigated by use of Ge overlayerWoicik, Pianetta, Kendelewicz
Physical Review. B, Condensed Matter|December 15, 1989
Alkali-metal-induced interface resonant state on a semiconductor surfaceSoukiassian, Kendelewicz, Hurych
Physical Review. B, Condensed Matter|February 15, 1992
Fermi-level pinning on ideally terminated InP(110) surfacesYamada, Wahi, Kendelewicz, et al.
Physical Review. B, Condensed Matter|November 15, 1986
Au-GaAs(110) interface: Photoemission studies of the effects of temperaturePetro, Kendelewicz, Lindau, et al.
Physical Review. B, Condensed Matter|April 15, 1987
Erratum: Au-GaAs(110) interface: Photoemission studies of the effects of temperaturePetro, Kendelewicz, Lindau, et al.
Physical Review. B, Condensed Matter|July 15, 1986
Binding-energy shifts from alloying at metal-compound-semiconductor interfacesNogami, Kendelewicz, Lindau, et al.
Physical Review. B, Condensed Matter|August 15, 1990
Room-temperature nitridation of gallium arsenide using alkali metal and molecular nitrogenSoukiassian, Starnberg, Kendelewicz, et al.
Physical Review. B, Condensed Matter|October 15, 1987
Physical nature of the InP near-surface defect acceptor and donor statesChin, Cao, Kendelewicz, et al.
Physical Review. B, Condensed Matter|May 15, 1985
Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP(110)Kendelewicz, Williams, Petro, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfacesKendelewicz, Williams, Petro, et al.
Pageof 4