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Showing results (31-40 of 61) with videos related to

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Small (Weinheim an Der Bergstrasse, Germany)|May 1, 2024
First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals HeterostructuresJinying Wang, Dmitri E Nikonov, Hongyang Lin, et al.
Nanoscale|July 31, 2013
Atomistic modeling of metallic nanowires in siliconHoon Ryu, Sunhee Lee, Bent Weber, et al.
Nature Communications|April 21, 2016
Quantum simulation of the Hubbard model with dopant atoms in siliconJ Salfi, J A Mol, R Rahman, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 27, 2019
WSe<sub>2</sub> Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable ComputingChin-Sheng Pang, Chin-Yi Chen, Tarek Ameen, et al.
Nanotechnology|April 4, 2012
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic propertiesMuhammad Usman, Vittorianna Tasco, Maria Teresa Todaro, et al.
Nanotechnology|July 9, 2011
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculationsMuhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, et al.
Nature Materials|April 8, 2014
Spatially resolving valley quantum interference of a donor in siliconJ Salfi, J A Mol, R Rahman, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theoryMuhammad Usman, Rajib Rahman, Joe Salfi, et al.
Physical Review Letters|August 7, 2007
High precision quantum control of single donor spins in siliconRajib Rahman, Cameron J Wellard, Forrest R Bradbury, et al.
Physical Review Letters|December 27, 2014
Spin-lattice relaxation times of single donors and donor clusters in siliconYu-Ling Hsueh, Holger Büch, Yaohua Tan, et al.
Pageof 7

Showing results (31-40 of 61) with videos related to

Sort By:
Pageof 7
Small (Weinheim an Der Bergstrasse, Germany)|May 1, 2024
First-Principles Simulation and Materials Screening for Spin-Orbit Torque in 2D van der Waals HeterostructuresJinying Wang, Dmitri E Nikonov, Hongyang Lin, et al.
Nanoscale|July 31, 2013
Atomistic modeling of metallic nanowires in siliconHoon Ryu, Sunhee Lee, Bent Weber, et al.
Nature Communications|April 21, 2016
Quantum simulation of the Hubbard model with dopant atoms in siliconJ Salfi, J A Mol, R Rahman, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 27, 2019
WSe<sub>2</sub> Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable ComputingChin-Sheng Pang, Chin-Yi Chen, Tarek Ameen, et al.
Nanotechnology|April 4, 2012
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic propertiesMuhammad Usman, Vittorianna Tasco, Maria Teresa Todaro, et al.
Nanotechnology|July 9, 2011
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculationsMuhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, et al.
Nature Materials|April 8, 2014
Spatially resolving valley quantum interference of a donor in siliconJ Salfi, J A Mol, R Rahman, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theoryMuhammad Usman, Rajib Rahman, Joe Salfi, et al.
Physical Review Letters|August 7, 2007
High precision quantum control of single donor spins in siliconRajib Rahman, Cameron J Wellard, Forrest R Bradbury, et al.
Physical Review Letters|December 27, 2014
Spin-lattice relaxation times of single donors and donor clusters in siliconYu-Ling Hsueh, Holger Büch, Yaohua Tan, et al.
Pageof 7