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Sensors (Basel, Switzerland)|January 6, 2012
Development of an ion sensitive field effect transistor based urea biosensor with solid state reference systemsKow-Ming Chang, Chih-Tien Chang, Kun-Mou ChanSensors (Basel, Switzerland)|March 9, 2012
A novel pH-dependent drift improvement method for zirconium dioxide gated pH-ion sensitive field effect transistorsKow-Ming Chang, Chih-Tien Chang, Kuo-Yi Chao, et al.Journal of Nanoscience and Nanotechnology|November 30, 2018
Study of <i>In-Situ</i> Hydrogen Plasma Treatment on InGaZnO with Atmospheric Pressure-Plasma Enhanced Chemical Vapor DepositionChien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, et al.Journal of Nanoscience and Nanotechnology|November 30, 2018
The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film TransistorsChien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, et al.Journal of Nanoscience and Nanotechnology|November 30, 2018
Investigation of Electrical Characteristics on LaAlO₃/ZrO₂/IGZO TFTs with Microwave AnnealingChien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, et al.Nanotechnology|June 18, 2021
Role of<i>in-situ</i>hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistorsOm Kumar Prasad, Srikant Kumar Mohanty, Chien Hung Wu, et al.Journal of Nanoscience and Nanotechnology|November 30, 2018
Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma TreatmentChien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, et al.Journal of Nanoscience and Nanotechnology|January 24, 2020
Effects of <i>P</i>-Type SnO<sub>x</sub> Thin-Film Transistors with N₂ and O₂ Ambient Furnace AnnealingYu-Xin Zhang, Chien-Hung Wu, Kow-Ming Chang, et al.Nanotechnology|January 25, 2023
High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by<i>in situ</i>H<sub>2</sub>plasma and neutral oxygen beam irradiation treatmentChien-Hung Wu, Srikant Kumar Mohanty, Bo-Wen Huang, et al.Journal of Nanoscience and Nanotechnology|July 19, 2016
The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO ChannelChien-Hung Wu, Bo-Wen Huang, Kow-Ming Chang, et al.Pageof 2