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ACS Nano|January 25, 2024
Tuning Polarity in WSe2/AlScN FeFETs via Contact EngineeringKwan-Ho Kim, Seunguk Song, Bumho Kim, et al.
Nanoscale|June 28, 2019
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuitsJaewoo Shim, Sung Woon Jang, Ji-Hye Lim, et al.
ACS Nano|April 18, 2022
High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective ContactsKwan-Ho Kim, Maksim Andreev, Soodon Choi, et al.
Nano Letters|September 2, 2025
Demonstration of Highly Scaled AlScN Ferroelectric Diode Memory with a Storage Density of >100 Mbit/mm2Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 12, 2020
Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid StructureKil-Su Jung, Keun Heo, Min-Je Kim, et al.
Nanoscale Horizons|April 1, 2020
A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memoryKwan-Ho Kim, Hyung-Youl Park, Jaewoo Shim, et al.
ACS Applied Materials & Interfaces|October 4, 2022
Microwave Facilitated Covalent Organic Framework/Transition Metal Dichalcogenide HeterostructuresLucas K Beagle, David C Moore, Gwangwoo Kim, et al.
Nature Communications|December 10, 2021
High-specific-power flexible transition metal dichalcogenide solar cellsKoosha Nassiri Nazif, Alwin Daus, Jiho Hong, et al.
ACS Nano|May 27, 2022
High-Density, Localized Quantum Emitters in Strained 2D SemiconductorsGwangwoo Kim, Hyong Min Kim, Pawan Kumar, et al.
Nature Nanotechnology|May 22, 2023
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistorsKwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, et al.
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