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Kyoungah Cho

Showing results (21-30 of 53) with videos related to

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Micromachines|June 28, 2023
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect TransistorsJuhee Jeon, Kyoungah Cho, Sangsig Kim
Scientific Reports|November 23, 2022
Universal logic-in-memory cell enabling all basic Boolean algebra logicEunwoo Baek, Kyoungah Cho, Sangsig Kim
Micromachines|April 23, 2022
Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect TransistorEunwoo Baek, Jaemin Son, Kyoungah Cho, et al.
Nanomaterials (Basel, Switzerland)|April 12, 2024
Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect TransistorsJaemin Son, Juhee Jeon, Kyoungah Cho, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Resistive switching characteristics of HfO2-based memory devices on flexible plasticsYong Han, Kyoungah Cho, Sukhyung Park, et al.
Journal of Nanoscience and Nanotechnology|July 18, 2013
Nanocrystal-based complementary inverters constructed on flexible plastic substratesJaewon Jang, Kyoungah Cho, Junggwon Yun, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowiresSungsu Kim, Kyoungah Cho, Kiyeol Kwak, et al.
ACS Applied Materials & Interfaces|January 23, 2016
Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic EffectKwangeun Kim, Youngin Jeon, Kyoungah Cho, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching CharacteristicsSukhyung Park, Kyoungah Cho, Jungwoo Jung, et al.
Scientific Reports|July 22, 2022
Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistorsJuhee Jeon, Sola Woo, Kyoungah Cho, et al.
Pageof 6

Showing results (21-30 of 53) with videos related to

Sort By:
Pageof 6
Micromachines|June 28, 2023
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect TransistorsJuhee Jeon, Kyoungah Cho, Sangsig Kim
Scientific Reports|November 23, 2022
Universal logic-in-memory cell enabling all basic Boolean algebra logicEunwoo Baek, Kyoungah Cho, Sangsig Kim
Micromachines|April 23, 2022
Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect TransistorEunwoo Baek, Jaemin Son, Kyoungah Cho, et al.
Nanomaterials (Basel, Switzerland)|April 12, 2024
Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect TransistorsJaemin Son, Juhee Jeon, Kyoungah Cho, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Resistive switching characteristics of HfO2-based memory devices on flexible plasticsYong Han, Kyoungah Cho, Sukhyung Park, et al.
Journal of Nanoscience and Nanotechnology|July 18, 2013
Nanocrystal-based complementary inverters constructed on flexible plastic substratesJaewon Jang, Kyoungah Cho, Junggwon Yun, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowiresSungsu Kim, Kyoungah Cho, Kiyeol Kwak, et al.
ACS Applied Materials & Interfaces|January 23, 2016
Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic EffectKwangeun Kim, Youngin Jeon, Kyoungah Cho, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching CharacteristicsSukhyung Park, Kyoungah Cho, Jungwoo Jung, et al.
Scientific Reports|July 22, 2022
Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistorsJuhee Jeon, Sola Woo, Kyoungah Cho, et al.
Pageof 6