Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

L Geelhaar

Showing results (1-10 of 28) with videos related to

Pageof 3
Sort By:
Physical Review Letters|May 1, 2001
GaAs(2 5 11): a new stable surface within the stereographic triangleL Geelhaar, J Márquez, P Kratzer, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 8, 2011
Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructuresY Takagaki, J Herfort, M Hilse, et al.
Nanotechnology|May 28, 2016
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensemblesM Musolino, A Tahraoui, D van Treeck, et al.
Nanotechnology|January 15, 2019
Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al <sub>x</sub> O <sub>y</sub> : in situ quadrupole mass spectrometry studiesM Sobanska, Z R Zytkiewicz, G Calabrese, et al.
Nanotechnology|July 4, 2012
Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)A Biermanns, S Breuer, A Trampert, et al.
Nanotechnology|March 3, 2026
Erratum: Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al<i>x</i>O<i>y</i>:<i>in situ</i>quadrupole mass spectrometry studies (2019<i>Nanotechnology</i><b>30</b>154002)M Sobanska, Z R Zytkiewicz, G Calabrese, et al.
Physical Review Letters|February 1, 2008
Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kineticsM Albrecht, H Abu-Farsakh, T Remmele, et al.
Nanotechnology|October 13, 2015
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth processJ K Zettler, P Corfdir, L Geelhaar, et al.
Nanotechnology|June 13, 2023
Density control of GaN nanowires at the wafer scale using self-assembled SiN<sub></sub>patches on sputtered TiN(111)T Auzelle, M Oliva, P John, et al.
Nanotechnology|February 7, 2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodesM Musolino, A Tahraoui, S Fernández-Garrido, et al.
Pageof 3

Showing results (1-10 of 28) with videos related to

Sort By:
Pageof 3
Physical Review Letters|May 1, 2001
GaAs(2 5 11): a new stable surface within the stereographic triangleL Geelhaar, J Márquez, P Kratzer, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 8, 2011
Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructuresY Takagaki, J Herfort, M Hilse, et al.
Nanotechnology|May 28, 2016
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensemblesM Musolino, A Tahraoui, D van Treeck, et al.
Nanotechnology|January 15, 2019
Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al <sub>x</sub> O <sub>y</sub> : in situ quadrupole mass spectrometry studiesM Sobanska, Z R Zytkiewicz, G Calabrese, et al.
Nanotechnology|July 4, 2012
Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)A Biermanns, S Breuer, A Trampert, et al.
Nanotechnology|March 3, 2026
Erratum: Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al<i>x</i>O<i>y</i>:<i>in situ</i>quadrupole mass spectrometry studies (2019<i>Nanotechnology</i><b>30</b>154002)M Sobanska, Z R Zytkiewicz, G Calabrese, et al.
Physical Review Letters|February 1, 2008
Compositional correlation and anticorrelation in quaternary alloys: competition between bulk thermodynamics and surface kineticsM Albrecht, H Abu-Farsakh, T Remmele, et al.
Nanotechnology|October 13, 2015
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth processJ K Zettler, P Corfdir, L Geelhaar, et al.
Nanotechnology|June 13, 2023
Density control of GaN nanowires at the wafer scale using self-assembled SiN<sub></sub>patches on sputtered TiN(111)T Auzelle, M Oliva, P John, et al.
Nanotechnology|February 7, 2015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodesM Musolino, A Tahraoui, S Fernández-Garrido, et al.
Pageof 3