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L Geelhaar

Showing results (11-20 of 28) with videos related to

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Nanotechnology|February 6, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowiresM Oliva, V Kaganer, M Pudelski, et al.
Nanotechnology|June 30, 2016
Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensemblesM Sobanska, S Fernández-Garrido, Z R Zytkiewicz, et al.
Nanotechnology|October 21, 2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescenceS Fernández-Garrido, V M Kaganer, C Hauswald, et al.
Nanotechnology|August 14, 2023
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowiresP John, M Gómez Ruiz, L van Deurzen, et al.
Nanotechnology|November 14, 2014
Axial InAs/GaAs heterostructures on silicon in a nanowire geometryC Somaschini, A Biermanns, S Bietti, et al.
Nanotechnology|September 21, 2017
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foilsG Calabrese, S V Pettersen, C Pfüller, et al.
Nanotechnology|March 25, 2024
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxyM Gómez Ruiz, A Castro, J Herranz, et al.
Nano Letters|May 23, 2015
Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN FilmM Wölz, C Hauswald, T Flissikowski, et al.
Nanotechnology|March 6, 2014
High-frequency acoustic charge transport in GaAs nanowiresS Büyükköse, A Hernández-Mínguez, B Vratzov, et al.
Nature Communications|April 25, 2013
Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductorY Puttisong, X J Wang, I A Buyanova, et al.
Pageof 3

Showing results (11-20 of 28) with videos related to

Sort By:
Pageof 3
Nanotechnology|February 6, 2023
A route for the top-down fabrication of ordered ultrathin GaN nanowiresM Oliva, V Kaganer, M Pudelski, et al.
Nanotechnology|June 30, 2016
Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensemblesM Sobanska, S Fernández-Garrido, Z R Zytkiewicz, et al.
Nanotechnology|October 21, 2014
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescenceS Fernández-Garrido, V M Kaganer, C Hauswald, et al.
Nanotechnology|August 14, 2023
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowiresP John, M Gómez Ruiz, L van Deurzen, et al.
Nanotechnology|November 14, 2014
Axial InAs/GaAs heterostructures on silicon in a nanowire geometryC Somaschini, A Biermanns, S Bietti, et al.
Nanotechnology|September 21, 2017
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foilsG Calabrese, S V Pettersen, C Pfüller, et al.
Nanotechnology|March 25, 2024
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxyM Gómez Ruiz, A Castro, J Herranz, et al.
Nano Letters|May 23, 2015
Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN FilmM Wölz, C Hauswald, T Flissikowski, et al.
Nanotechnology|March 6, 2014
High-frequency acoustic charge transport in GaAs nanowiresS Büyükköse, A Hernández-Mínguez, B Vratzov, et al.
Nature Communications|April 25, 2013
Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductorY Puttisong, X J Wang, I A Buyanova, et al.
Pageof 3