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Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
December 19, 2012
Atomic scale morphology, growth behaviour and electronic properties of semipolar {101[overline]3} GaN surfaces
J Kioseoglou, E Kalesaki, L Lymperakis, et al.
Physical Review Letters
|
December 17, 2004
Strain induced deep electronic states around threading dislocations in GaN
L Lymperakis, J Neugebauer, M Albrecht, et al.
Scientific Reports
|
November 6, 2019
Al<sub>5+α</sub>Si<sub>5+δ</sub>N<sub>12</sub>, a new Nitride compound
R Dagher, L Lymperakis, V Delaye, et al.
Journal of the Mechanical Behavior of Biomedical Materials
|
January 26, 2011
Robustness and optimal use of design principles of arthropod exoskeletons studied by ab initio-based multiscale simulations
S Nikolov, H Fabritius, M Petrov, et al.
Scientific Reports
|
June 23, 2019
Role of hole confinement in the recombination properties of InGaN quantum structures
M Anikeeva, M Albrecht, F Mahler, et al.
Physical Review Letters
|
February 5, 2013
Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN
T Markurt, L Lymperakis, J Neugebauer, et al.
Journal of the Mechanical Behavior of Biomedical Materials
|
March 20, 2013
Ab initio study of single-crystalline and polycrystalline elastic properties of Mg-substituted calcite crystals
L-F Zhu, M Friák, L Lymperakis, et al.
Scientific Reports
|
October 19, 2021
Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
I G Vasileiadis, L Lymperakis, A Adikimenakis, et al.
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of 1
Search research articles
Search
Showing results (1-10 of 8) with videos related to
Sort By:
Page
of 1
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
December 19, 2012
Atomic scale morphology, growth behaviour and electronic properties of semipolar {101[overline]3} GaN surfaces
J Kioseoglou, E Kalesaki, L Lymperakis, et al.
Physical Review Letters
|
December 17, 2004
Strain induced deep electronic states around threading dislocations in GaN
L Lymperakis, J Neugebauer, M Albrecht, et al.
Scientific Reports
|
November 6, 2019
Al<sub>5+α</sub>Si<sub>5+δ</sub>N<sub>12</sub>, a new Nitride compound
R Dagher, L Lymperakis, V Delaye, et al.
Journal of the Mechanical Behavior of Biomedical Materials
|
January 26, 2011
Robustness and optimal use of design principles of arthropod exoskeletons studied by ab initio-based multiscale simulations
S Nikolov, H Fabritius, M Petrov, et al.
Scientific Reports
|
June 23, 2019
Role of hole confinement in the recombination properties of InGaN quantum structures
M Anikeeva, M Albrecht, F Mahler, et al.
Physical Review Letters
|
February 5, 2013
Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN
T Markurt, L Lymperakis, J Neugebauer, et al.
Journal of the Mechanical Behavior of Biomedical Materials
|
March 20, 2013
Ab initio study of single-crystalline and polycrystalline elastic properties of Mg-substituted calcite crystals
L-F Zhu, M Friák, L Lymperakis, et al.
Scientific Reports
|
October 19, 2021
Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
I G Vasileiadis, L Lymperakis, A Adikimenakis, et al.
Page
of 1