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Physical Review Letters|December 17, 2004
Strain induced deep electronic states around threading dislocations in GaNL Lymperakis, J Neugebauer, M Albrecht, et al.
Physical Review Letters|February 5, 2013
Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaNT Markurt, L Lymperakis, J Neugebauer, et al.
Scientific Reports|June 23, 2019
Role of hole confinement in the recombination properties of InGaN quantum structuresM Anikeeva, M Albrecht, F Mahler, et al.
Journal of Microscopy|November 15, 2006
Cathodoluminescence in transmission electron microscopyH P Strunk, M Albrecht, H Scheel
Journal of the Mechanical Behavior of Biomedical Materials|January 26, 2011
Robustness and optimal use of design principles of arthropod exoskeletons studied by ab initio-based multiscale simulationsS Nikolov, H Fabritius, M Petrov, et al.
Journal of the Mechanical Behavior of Biomedical Materials|March 20, 2013
Ab initio study of single-crystalline and polycrystalline elastic properties of Mg-substituted calcite crystalsL-F Zhu, M Friák, L Lymperakis, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 19, 2012
Atomic scale morphology, growth behaviour and electronic properties of semipolar {101[overline]3} GaN surfacesJ Kioseoglou, E Kalesaki, L Lymperakis, et al.
Scientific Reports|November 6, 2019
Al5+αSi5+δN12, a new Nitride compoundR Dagher, L Lymperakis, V Delaye, et al.
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