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Physical Review Letters|April 4, 2015
Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxideAl-Moatasem El-Sayed, Matthew B Watkins, Tibor Grasser, et al.
Micromachines|March 29, 2023
Effect of Mask Geometry Variation on Plasma Etching ProfilesJosip Bobinac, Tobias Reiter, Julius Piso, et al.
ACS Applied Materials & Interfaces|July 6, 2022
Epitaxial Growth of Crystalline CaF2 on SiliceneDaniele Nazzari, Jakob Genser, Viktoria Ritter, et al.
ACS Nano|October 6, 2016
Long-Term Stability and Reliability of Black Phosphorus Field-Effect TransistorsYury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, et al.
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Scientific Reports|November 6, 2024
Automated image acquisition and analysis of graphene and hexagonal boron nitride from pristine to highly defective and amorphous structuresDiana Propst, Wael Joudi, Manuel Längle, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 16, 2020
Dielectric Properties of Ultrathin CaF2 Ionic CrystalsChao Wen, Alexander G Banshchikov, Yury Y Illarionov, et al.
ACS Nano|March 19, 2025
Stability and Reliability of van der Waals High-κ SrTiO3 Field-Effect Transistors with Small HysteresisSeyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, et al.
Communications Materials|January 12, 2026
Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stabilitySeyed Mehdi Sattari-Esfahlan, Yury Illarionov, Fang Xu, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi2SeO2 and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
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