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Lagally

Showing results (1-10 of 189) with videos related to

Pageof 19
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Science (New York, N.Y.)|April 18, 1997
Atomistic Processes in the Early Stages of Thin-Film GrowthZhang, Lagally
Physical Review Letters|April 22, 1996
Interplay of stress, structure, and stoichiometry in Ge-covered Si(001)Liu, Lagally
Physical Review Letters|August 26, 1985
Crystallography of In on GaAs(110): Possible relationship of laterally inhomogeneous structure of Fermi-level pinningSavage, Lagally
Physical Review Letters|February 24, 1986
Reliability of low-energy electron diffraction for studies of surface order-disorder phenomenaMoritz, Lagally
Science (New York, N.Y.)|November 21, 1997
Adatom pairing structures for Ge on si(100): the initial stage of island formationQin, Lagally
Physical Review Letters|September 16, 2000
Nucleationless three-dimensional island formation in low-misfit heteroepitaxySutter, Lagally
Physical Review Letters|January 31, 1994
Atomic-scale mechanisms for surfactant-mediated layer-by-layer growth in homoepitaxyZhang, Lagally
Physical Review Letters|September 25, 1995
Ge-induced reversal of surface stress anisotropy on Si(001)Wu, Lagally
Physical Review Letters|June 30, 1986
Moritz and Lagally respondMoritz, Lagally
Physical Review Letters|September 26, 1994
Bonding-geometry dependence of fractal growth on metal surfacesZhang, Chen, Lagally
Pageof 19

Showing results (1-10 of 189) with videos related to

Sort By:
Pageof 19
Science (New York, N.Y.)|April 18, 1997
Atomistic Processes in the Early Stages of Thin-Film GrowthZhang, Lagally
Physical Review Letters|April 22, 1996
Interplay of stress, structure, and stoichiometry in Ge-covered Si(001)Liu, Lagally
Physical Review Letters|August 26, 1985
Crystallography of In on GaAs(110): Possible relationship of laterally inhomogeneous structure of Fermi-level pinningSavage, Lagally
Physical Review Letters|February 24, 1986
Reliability of low-energy electron diffraction for studies of surface order-disorder phenomenaMoritz, Lagally
Science (New York, N.Y.)|November 21, 1997
Adatom pairing structures for Ge on si(100): the initial stage of island formationQin, Lagally
Physical Review Letters|September 16, 2000
Nucleationless three-dimensional island formation in low-misfit heteroepitaxySutter, Lagally
Physical Review Letters|January 31, 1994
Atomic-scale mechanisms for surfactant-mediated layer-by-layer growth in homoepitaxyZhang, Lagally
Physical Review Letters|September 25, 1995
Ge-induced reversal of surface stress anisotropy on Si(001)Wu, Lagally
Physical Review Letters|June 30, 1986
Moritz and Lagally respondMoritz, Lagally
Physical Review Letters|September 26, 1994
Bonding-geometry dependence of fractal growth on metal surfacesZhang, Chen, Lagally
Pageof 19