Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Lannoo

Showing results (21-30 of 279) with videos related to

Pageof 28
Sort By:
Physical Review Letters|April 24, 1995
Screening in Semiconductor Nanocrystallites and Its Consequences for Porous SiliconLannoo, Delerue, Allan
Physical Review. B, Condensed Matter|September 15, 1985
Calculation of the Kohn-Sham potential and its discontinuity for a model-semiconductorLannoo, Schlüter, Sham
Physical Review. B, Condensed Matter|May 15, 1986
Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality conditionPriester, Allan, Lannoo
Physical Review. B, Condensed Matter|June 15, 1989
Tight-binding prediction of tetrahedral semiconductor ionization potentialsLefebvre, Lannoo, Allan
Physical Review. B, Condensed Matter|March 15, 1987
Erratum: Oxide traps in Si-SiO2 structures characterized by tunnel emission with deep-level transient spectroscopyVuillaume, Bourgoin, Lannoo
Physical Review. B, Condensed Matter|October 15, 1993
Theoretical aspects of the luminescence of porous siliconDelerue, Allan, Lannoo
Physical Review Letters|July 11, 1988
Transition-metal impurities in semiconductors and heterojunction band lineupsDelerue, Lannoo, Langer
Physical Review. B, Condensed Matter|July 15, 1986
Oxide traps in Si-SiO2 structures characterized by tunnel emission with deep-level transient spectroscopyVuillaume, Bourgoin, Lannoo
Physical Review. B, Condensed Matter|April 15, 1988
Deviation from the classical 4:2 coordination in very thin SiO2 films grown on siliconHollinger, Sferco, Lannoo
Physical Review. B, Condensed Matter|May 15, 1988
Band-edge deformation potentials in a tight-binding frameworkPriester, Allan, Lannoo
Pageof 28

Showing results (21-30 of 279) with videos related to

Sort By:
Pageof 28
Physical Review Letters|April 24, 1995
Screening in Semiconductor Nanocrystallites and Its Consequences for Porous SiliconLannoo, Delerue, Allan
Physical Review. B, Condensed Matter|September 15, 1985
Calculation of the Kohn-Sham potential and its discontinuity for a model-semiconductorLannoo, Schlüter, Sham
Physical Review. B, Condensed Matter|May 15, 1986
Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality conditionPriester, Allan, Lannoo
Physical Review. B, Condensed Matter|June 15, 1989
Tight-binding prediction of tetrahedral semiconductor ionization potentialsLefebvre, Lannoo, Allan
Physical Review. B, Condensed Matter|March 15, 1987
Erratum: Oxide traps in Si-SiO2 structures characterized by tunnel emission with deep-level transient spectroscopyVuillaume, Bourgoin, Lannoo
Physical Review. B, Condensed Matter|October 15, 1993
Theoretical aspects of the luminescence of porous siliconDelerue, Allan, Lannoo
Physical Review Letters|July 11, 1988
Transition-metal impurities in semiconductors and heterojunction band lineupsDelerue, Lannoo, Langer
Physical Review. B, Condensed Matter|July 15, 1986
Oxide traps in Si-SiO2 structures characterized by tunnel emission with deep-level transient spectroscopyVuillaume, Bourgoin, Lannoo
Physical Review. B, Condensed Matter|April 15, 1988
Deviation from the classical 4:2 coordination in very thin SiO2 films grown on siliconHollinger, Sferco, Lannoo
Physical Review. B, Condensed Matter|May 15, 1988
Band-edge deformation potentials in a tight-binding frameworkPriester, Allan, Lannoo
Pageof 28