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Lanxia Cheng

Showing results (11-20 of 16) with videos related to

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ACS Nano|November 14, 2013
Metal contacts on physical vapor deposited monolayer MoS2Cheng Gong, Chunming Huang, Justin Miller, et al.
Nano Letters|August 6, 2016
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma ExposureAngelica Azcatl, Xiaoye Qin, Abhijith Prakash, et al.
ACS Applied Materials & Interfaces|July 16, 2020
Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D ElectronicsJaebeom Lee, Arul V Ravichandran, Jaidah Mohan, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 20, 2018
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct GrowthGuanyu Zhou, Rafik Addou, Qingxiao Wang, et al.
ACS Applied Materials & Interfaces|November 29, 2018
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch StopperHarrison Sejoon Kim, Xin Meng, Si Joon Kim, et al.
ACS Nano|December 16, 2014
HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxyRuoyu Yue, Adam T Barton, Hui Zhu, et al.
Pageof 2

Showing results (11-20 of 16) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 16 results.
ACS Nano|November 14, 2013
Metal contacts on physical vapor deposited monolayer MoS2Cheng Gong, Chunming Huang, Justin Miller, et al.
Nano Letters|August 6, 2016
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma ExposureAngelica Azcatl, Xiaoye Qin, Abhijith Prakash, et al.
ACS Applied Materials & Interfaces|July 16, 2020
Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D ElectronicsJaebeom Lee, Arul V Ravichandran, Jaidah Mohan, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 20, 2018
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct GrowthGuanyu Zhou, Rafik Addou, Qingxiao Wang, et al.
ACS Applied Materials & Interfaces|November 29, 2018
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch StopperHarrison Sejoon Kim, Xin Meng, Si Joon Kim, et al.
ACS Nano|December 16, 2014
HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxyRuoyu Yue, Adam T Barton, Hui Zhu, et al.
Pageof 2