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Laura Anoldo

Showing results (1-10 of 2) with videos related to

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Materials (Basel, Switzerland)|April 27, 2024
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias StressesLaura Anoldo, Edoardo Zanetti, Walter Coco, et al.
Micromachines|July 27, 2024
Positive Bias Temperature Instability in SiC-Based Power MOSFETsVladislav Volosov, Santina Bevilacqua, Laura Anoldo, et al.
Pageof 1

Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Materials (Basel, Switzerland)|April 27, 2024
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias StressesLaura Anoldo, Edoardo Zanetti, Walter Coco, et al.
Micromachines|July 27, 2024
Positive Bias Temperature Instability in SiC-Based Power MOSFETsVladislav Volosov, Santina Bevilacqua, Laura Anoldo, et al.
Pageof 1