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LeGoues

Showing results (11-20 of 30) with videos related to

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Physical Review Letters|November 29, 1993
Surface morphology and alloy ordering in epitaxial growth of SiGeLeGoues, Tersoff, Tromp
Physical Review Letters|July 19, 1993
Measurement of the activation barrier to nucleation of dislocations in thin filmsLeGoues, Mooney, Tersoff
Physical Review Letters|June 20, 1994
LeGoues, Mooney, and Tersoff replyLeGoues, Mooney, Tersoff
Physical Review Letters|May 13, 1985
Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)Liehr, Schmid, LeGoues, et al.
Physical Review Letters|November 7, 1988
Structural characterization of the Si(111)-CaF2 interface by high-resolution transmission electron microscopyTromp, LeGoues, Krakow, et al.
Physical Review Letters|July 11, 1988
Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystalsDimos, Chaudhari, Mannhart, et al.
Physical Review. B, Condensed Matter|April 15, 1993
Medium-energy-ion-scattering investigations of Si and Ge growth on GaAs(001)-c(2 x 8)/(2 x 4)Falta, Copel, LeGoues, et al.
Physical Review. B, Condensed Matter|April 15, 1986
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interfaceLiehr, Lefakis, LeGoues, et al.
Physical Review Letters|January 15, 1990
Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layersFreeouf, Tsang, LeGoues, et al.
Physical Review Letters|April 23, 1990
Surface-stress-induced order in SiGe alloy filmsLeGoues, Kesan, Iyer, et al.
Pageof 3

Showing results (11-20 of 30) with videos related to

Sort By:
Pageof 3
Physical Review Letters|November 29, 1993
Surface morphology and alloy ordering in epitaxial growth of SiGeLeGoues, Tersoff, Tromp
Physical Review Letters|July 19, 1993
Measurement of the activation barrier to nucleation of dislocations in thin filmsLeGoues, Mooney, Tersoff
Physical Review Letters|June 20, 1994
LeGoues, Mooney, and Tersoff replyLeGoues, Mooney, Tersoff
Physical Review Letters|May 13, 1985
Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)Liehr, Schmid, LeGoues, et al.
Physical Review Letters|November 7, 1988
Structural characterization of the Si(111)-CaF2 interface by high-resolution transmission electron microscopyTromp, LeGoues, Krakow, et al.
Physical Review Letters|July 11, 1988
Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystalsDimos, Chaudhari, Mannhart, et al.
Physical Review. B, Condensed Matter|April 15, 1993
Medium-energy-ion-scattering investigations of Si and Ge growth on GaAs(001)-c(2 x 8)/(2 x 4)Falta, Copel, LeGoues, et al.
Physical Review. B, Condensed Matter|April 15, 1986
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interfaceLiehr, Lefakis, LeGoues, et al.
Physical Review Letters|January 15, 1990
Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layersFreeouf, Tsang, LeGoues, et al.
Physical Review Letters|April 23, 1990
Surface-stress-induced order in SiGe alloy filmsLeGoues, Kesan, Iyer, et al.
Pageof 3