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Science Bulletin|May 10, 2024
Towards the selective growth of two-dimensional ordered CxNy compounds via epitaxial substrate mediationXiaoshu Gong, Ruikang Dong, Jinlan Wang, et al.
The Journal of Chemical Physics|June 3, 2010
Fluorination induced half metallicity in two-dimensional few zinc oxide layersQian Chen, Jinlan Wang, Liyan Zhu, et al.
The Journal of Physical Chemistry Letters|October 24, 2024
Mechanism of Thermodynamically Rationalized Selective Growth of a Two-Dimensional Ternary Ferromagnet on Insulating SubstratesXiaoshu Gong, Qiang Li, Ruikang Dong, et al.
ACS Applied Materials & Interfaces|August 23, 2019
Auxetic B4N Monolayer: A Promising 2D Material with in-Plane Negative Poisson's Ratio and Large Anisotropic MechanicsBing Wang, Qisheng Wu, Yehui Zhang, et al.
Journal of the American Chemical Society|January 12, 2019
Diisopropylammonium Bromide Based Two-Dimensional Ferroelectric Monolayer Molecular Crystal with Large In-Plane Spontaneous PolarizationLiang Ma, Yinglu Jia, Stephen Ducharme, et al.
Nanotechnology|March 24, 2011
Formation and electronic properties of hydrogenated few layer grapheneLiyan Zhu, Hong Hu, Qian Chen, et al.
ACS Applied Materials & Interfaces|April 25, 2018
Two-Dimensional AuMX2 (M = Al, Ga, In; X = S, Se) Monolayers Featuring Intracrystalline Aurophilic Interactions with Novel Electronic and Optical PropertiesQisheng Wu, Wen Wu Xu, Liang Ma, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 15, 2022
The Intrinsic Thermodynamic Difficulty and a Step-Guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS2 with Controllable ThicknessRuikang Dong, Xiaoshu Gong, Jiafu Yang, et al.
Nano Letters|December 1, 2025
Extending the Schottky-Mott Rule to Atomic Thickness: Descriptors for Two-Dimensional Semiconductor-Metal ContactsXing Yu, Xinyu Chen, Xuchen Yu, et al.
Nanoscale|February 27, 2019
MnX (X = P, As) monolayers: a new type of two-dimensional intrinsic room temperature ferromagnetic half-metallic material with large magnetic anisotropyBing Wang, Yehui Zhang, Liang Ma, et al.
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