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Journal of the American Chemical Society|February 26, 2026
Medium-Range Structural Order in Amorphous ArsenicYuanbin Liu, Yuxing Zhou, Richard Ademuwagun, et al.Angewandte Chemie (International Ed. in English)|March 22, 2024
Understanding Defects in Amorphous Silicon with Million-Atom Simulations and Machine LearningJoe D Morrow, Chinonso Ugwumadu, David A Drabold, et al.Physical Review Letters|March 21, 2008
Defect-Dipole Formation in Copper-Doped PbTiO3 FerroelectricsRüdiger-A Eichel, Paul Erhart, Petra Träskelin, et al.The Journal of Physical Chemistry. B|September 4, 2018
Modeling the Phase-Change Memory Material, Ge2Sb2Te5, with a Machine-Learned Interatomic PotentialFelix C Mocanu, Konstantinos Konstantinou, Tae Hoon Lee, et al.Scientific Reports|August 23, 2016
Reconciling Local Structure Disorder and the Relaxor State in (Bi1/2Na1/2)TiO3-BaTiO3Pedro B Groszewicz, Melanie Gröting, Hergen Breitzke, et al.Nature|January 7, 2021
Origins of structural and electronic transitions in disordered siliconVolker L Deringer, Noam Bernstein, Gábor Csányi, et al.Chemistry of Materials : a Publication of the American Chemical Society|August 15, 2022
Visualization and Quantification of Geometric Diversity in Metal-Organic FrameworksThomas C Nicholas, Eugeny V Alexandrov, Vladislav A Blatov, et al.Nature Communications|August 15, 2022
The origin of jerky dislocation motion in high-entropy alloysDaniel Utt, Subin Lee, Yaolong Xing, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|August 5, 2011
Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronicsMareike V Hohmann, Péter Ágoston, André Wachau, et al.Chemical Communications (Cambridge, England)|March 31, 2025
An experimental data library for the full CsPb(ClBr1-)3 compositional seriesKinga O Mastej, Bodoo Batnaran, Antti-Pekka M Reponen, et al.Pageof 14