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Lucia Calcagno

Showing results (11-20 of 17) with videos related to

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Materials (Basel, Switzerland)|October 18, 2019
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial LayersCristiano Calabretta, Marta Agati, Massimo Zimbone, et al.
Crystal Growth & Design|August 9, 2022
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiCCristiano Calabretta, Viviana Scuderi, Corrado Bongiorno, et al.
Materials (Basel, Switzerland)|December 23, 2023
Single-Ion Counting with an Ultra-Thin-Membrane Silicon Carbide SensorEnrico Sangregorio, Lucia Calcagno, Elisabetta Medina, et al.
Sensors (Basel, Switzerland)|July 29, 2023
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide DetectorsCarmen Altana, Lucia Calcagno, Caterina Ciampi, et al.
Materials (Basel, Switzerland)|February 27, 2026
High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature OperationAlfio Samuele Mancuso, Saverio De Luca, Enrico Sangregorio, et al.
Materials (Basel, Switzerland)|June 13, 2025
Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction DetectorAlfio Samuele Mancuso, Enrico Sangregorio, Annamaria Muoio, et al.
Sensors (Basel, Switzerland)|July 18, 2018
SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and ApplicationsSalvatore Tudisco, Francesco La Via, Clementina Agodi, et al.
Pageof 2

Showing results (11-20 of 17) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 17 results.
Materials (Basel, Switzerland)|October 18, 2019
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial LayersCristiano Calabretta, Marta Agati, Massimo Zimbone, et al.
Crystal Growth & Design|August 9, 2022
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiCCristiano Calabretta, Viviana Scuderi, Corrado Bongiorno, et al.
Materials (Basel, Switzerland)|December 23, 2023
Single-Ion Counting with an Ultra-Thin-Membrane Silicon Carbide SensorEnrico Sangregorio, Lucia Calcagno, Elisabetta Medina, et al.
Sensors (Basel, Switzerland)|July 29, 2023
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide DetectorsCarmen Altana, Lucia Calcagno, Caterina Ciampi, et al.
Materials (Basel, Switzerland)|February 27, 2026
High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature OperationAlfio Samuele Mancuso, Saverio De Luca, Enrico Sangregorio, et al.
Materials (Basel, Switzerland)|June 13, 2025
Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction DetectorAlfio Samuele Mancuso, Enrico Sangregorio, Annamaria Muoio, et al.
Sensors (Basel, Switzerland)|July 18, 2018
SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and ApplicationsSalvatore Tudisco, Francesco La Via, Clementina Agodi, et al.
Pageof 2