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Journal of Microscopy|April 16, 2003
Electron energy-loss near edge structure (ELNES) of InGaN quantum wellsV J Keast, M J Kappers, C J HumphreysUltramicroscopy|July 4, 2009
Lattice distortions in GaN on sapphire using the CBED-HOLZ techniqueD V Sridhara Rao, K McLaughlin, M J Kappers, et al.Micron (Oxford, England : 1993)|June 29, 2023
Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescenceK Loeto, G Kusch, S Ghosh, et al.The Review of Scientific Instruments|July 2, 2010
Imaging dislocations in gallium nitride across broad areas using atomic force microscopyS E Bennett, D Holec, M J Kappers, et al.Ultramicroscopy|March 25, 2021
Directly correlated microscopy of trench defects in InGaN quantum wellsT J O'Hanlon, F C-P Massabuau, A Bao, et al.Ultramicroscopy|March 2, 2020
Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniquesT J O'Hanlon, A Bao, F C-P Massabuau, et al.Scientific Reports|February 4, 2017
Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptorA K Singh, K P O'Donnell, P R Edwards, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 21, 2018
Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structuresW E Blenkhorn, S Schulz, D S P Tanner, et al.Ultramicroscopy|February 22, 2011
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlatticeS E Bennett, R M Ulfig, P H Clifton, et al.Physical Review Letters|July 30, 2013
Mg doping affects dislocation core structures in GaNS K Rhode, M K Horton, M J Kappers, et al.Pageof 2