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ACS Photonics|August 21, 2023
Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum WellsR M Barrett, J M McMahon, R Ahumada-Lazo, et al.Nanoscale|July 9, 2024
Efficiency droop in zincblende InGaN/GaN quantum wellsD Dyer, S A Church, R Ahumada-Lazo, et al.Scientific Reports|December 13, 2019
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wellsA A Roble, S K Patra, F Massabuau, et al.Scientific Reports|March 25, 2020
Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wellsA A Roble, S K Patra, F Massabuau, et al.Physical Review Letters|March 18, 2017
Lattice Location of Mg in GaN: A Fresh Look at Doping LimitationsU Wahl, L M Amorim, V Augustyns, et al.Faraday Discussions|May 9, 2022
Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)B F Spencer, S A Church, P Thompson, et al.Ultramicroscopy|February 16, 2017
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problemC J Humphreys, J T Griffiths, F Tang, et al.Pageof 2