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Nanoscale|July 9, 2024
Efficiency droop in zincblende InGaN/GaN quantum wellsD Dyer, S A Church, R Ahumada-Lazo, et al.
Physical Review Letters|March 18, 2017
Lattice Location of Mg in GaN: A Fresh Look at Doping LimitationsU Wahl, L M Amorim, V Augustyns, et al.
Faraday Discussions|May 9, 2022
Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)B F Spencer, S A Church, P Thompson, et al.
Ultramicroscopy|February 16, 2017
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problemC J Humphreys, J T Griffiths, F Tang, et al.
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