Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

M J Süess

Showing results (1-10 of 4) with videos related to

Pageof 1
Sort By:
Ultramicroscopy|July 29, 2011
Minimization of amorphous layer in Ar+ ion milling for UHR-EMM J Süess, E Mueller, R Wepf
Nano Letters|February 26, 2014
Power-dependent Raman analysis of highly strained Si nanobridgesM J Süess, R A Minamisawa, R Geiger, et al.
Nature Communications|October 4, 2012
Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%R A Minamisawa, M J Süess, R Spolenak, et al.
Nanotechnology|October 25, 2012
Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal spaceN Hrauda, J J Zhang, M J Süess, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Ultramicroscopy|July 29, 2011
Minimization of amorphous layer in Ar+ ion milling for UHR-EMM J Süess, E Mueller, R Wepf
Nano Letters|February 26, 2014
Power-dependent Raman analysis of highly strained Si nanobridgesM J Süess, R A Minamisawa, R Geiger, et al.
Nature Communications|October 4, 2012
Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%R A Minamisawa, M J Süess, R Spolenak, et al.
Nanotechnology|October 25, 2012
Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal spaceN Hrauda, J J Zhang, M J Süess, et al.
Pageof 1