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Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 9, 2016
Virtual crystal description of III-V semiconductor alloys in the tight binding approachM O Nestoklon, R Benchamekh, P VoisinJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 13, 2019
Tight-binding calculations of SiGe alloy nanocrystals in SiO<sub>2</sub> matrixA V Belolipetsky, M O Nestoklon, I N YassievichJournal of Physics. Condensed Matter : an Institute of Physics Journal|January 7, 2016
Intrinsic interface states in InAs-AlSb heterostructuresF Raouafi, R Benchamekh, M O Nestoklon, et al.Physical Review Letters|December 31, 2008
STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity statesJ-M Jancu, J-Ch Girard, M O Nestoklon, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 3, 2019
Electronic band structure in n-type GaAs/AlGaAs wide quantum wells in tilted magnetic fieldI L Drichko, I Yu Smirnov, A V Suslov, et al.Nano Letters|November 23, 2019
Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-UltravioletA A Toropov, E A Evropeitsev, M O Nestoklon, et al.Nature Communications|June 2, 2022
The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gapE Kirstein, D R Yakovlev, M M Glazov, et al.Pageof 1