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M Tchernycheva

Showing results (1-10 of 29) with videos related to

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Optics Express|June 21, 2012
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wellsA Lupu, M Tchernycheva, Y Kotsar, et al.
Nanotechnology|November 15, 2021
GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxyC Himwas, V Yordsri, C Thanachayanont, et al.
Optics Letters|August 14, 2013
Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interfaceA Stolz, M Tchernycheva, P Tilmant, et al.
Nanotechnology|March 13, 2023
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si<i></i>N<i></i>B Damilano, S Vézian, J Brault, et al.
Nanotechnology|July 6, 2011
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyM Tchernycheva, J C Harmand, G Patriarche, et al.
Nanotechnology|August 10, 2011
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)L Largeau, D L Dheeraj, M Tchernycheva, et al.
Nanotechnology|July 31, 2014
Contact properties to CVD-graphene on GaAs substrates for optoelectronic applicationsA V Babichev, V E Gasumyants, A Yu Egorov, et al.
Nanotechnology|October 24, 2012
Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowiresL F Zagonel, L Rigutti, M Tchernycheva, et al.
Nano Letters|December 18, 2015
Excitonic Diffusion in InGaN/GaN Core-Shell NanowiresM Shahmohammadi, J-D Ganière, H Zhang, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|June 4, 2008
Shape modification of III-V nanowires: the role of nucleation on sidewallsV G Dubrovskii, N V Sibirev, G E Cirlin, et al.
Pageof 3

Showing results (1-10 of 29) with videos related to

Sort By:
Pageof 3
Optics Express|June 21, 2012
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wellsA Lupu, M Tchernycheva, Y Kotsar, et al.
Nanotechnology|November 15, 2021
GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxyC Himwas, V Yordsri, C Thanachayanont, et al.
Optics Letters|August 14, 2013
Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interfaceA Stolz, M Tchernycheva, P Tilmant, et al.
Nanotechnology|March 13, 2023
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si<i></i>N<i></i>B Damilano, S Vézian, J Brault, et al.
Nanotechnology|July 6, 2011
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyM Tchernycheva, J C Harmand, G Patriarche, et al.
Nanotechnology|August 10, 2011
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)L Largeau, D L Dheeraj, M Tchernycheva, et al.
Nanotechnology|July 31, 2014
Contact properties to CVD-graphene on GaAs substrates for optoelectronic applicationsA V Babichev, V E Gasumyants, A Yu Egorov, et al.
Nanotechnology|October 24, 2012
Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowiresL F Zagonel, L Rigutti, M Tchernycheva, et al.
Nano Letters|December 18, 2015
Excitonic Diffusion in InGaN/GaN Core-Shell NanowiresM Shahmohammadi, J-D Ganière, H Zhang, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|June 4, 2008
Shape modification of III-V nanowires: the role of nucleation on sidewallsV G Dubrovskii, N V Sibirev, G E Cirlin, et al.
Pageof 3