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M Y Simmons

Showing results (1-10 of 49) with videos related to

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Nanotechnology|August 23, 2011
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layersG Scappucci, G Capellini, W M Klesse, et al.
Nanotechnology|March 4, 2011
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devicesW M Klesse, G Scappucci, G Capellini, et al.
Nanotechnology|January 8, 2013
Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architectureS R McKibbin, G Scappucci, W Pok, et al.
Physical Review Letters|July 23, 2008
Anticrossing of spin-split subbands in quasi-one-dimensional wiresA C Graham, M Y Simmons, D A Ritchie, et al.
Nanotechnology|November 7, 2009
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopyG Scappucci, G Capellini, W C T Lee, et al.
Nature Communications|June 19, 2013
Spin readout and addressability of phosphorus-donor clusters in siliconH Büch, S Mahapatra, R Rahman, et al.
Physical Review Letters|December 18, 2002
Kondo effect in a quantum antidotM Kataoka, C J B Ford, M Y Simmons, et al.
Nano Letters|January 6, 2009
Atomic-scale, all epitaxial in-plane gated donor quantum dot in siliconA Fuhrer, M Füchsle, T C G Reusch, et al.
Physical Review Letters|November 10, 2015
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge StateT F Watson, B Weber, M G House, et al.
Physical Review Letters|June 28, 2014
Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germaniumS Shamim, S Mahapatra, G Scappucci, et al.
Pageof 5

Showing results (1-10 of 49) with videos related to

Sort By:
Pageof 5
Nanotechnology|August 23, 2011
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layersG Scappucci, G Capellini, W M Klesse, et al.
Nanotechnology|March 4, 2011
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devicesW M Klesse, G Scappucci, G Capellini, et al.
Nanotechnology|January 8, 2013
Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architectureS R McKibbin, G Scappucci, W Pok, et al.
Physical Review Letters|July 23, 2008
Anticrossing of spin-split subbands in quasi-one-dimensional wiresA C Graham, M Y Simmons, D A Ritchie, et al.
Nanotechnology|November 7, 2009
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopyG Scappucci, G Capellini, W C T Lee, et al.
Nature Communications|June 19, 2013
Spin readout and addressability of phosphorus-donor clusters in siliconH Büch, S Mahapatra, R Rahman, et al.
Physical Review Letters|December 18, 2002
Kondo effect in a quantum antidotM Kataoka, C J B Ford, M Y Simmons, et al.
Nano Letters|January 6, 2009
Atomic-scale, all epitaxial in-plane gated donor quantum dot in siliconA Fuhrer, M Füchsle, T C G Reusch, et al.
Physical Review Letters|November 10, 2015
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge StateT F Watson, B Weber, M G House, et al.
Physical Review Letters|June 28, 2014
Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germaniumS Shamim, S Mahapatra, G Scappucci, et al.
Pageof 5