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Madani Labed

Showing results (1-10 of 8) with videos related to

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Nanomaterials (Basel, Switzerland)|March 10, 2022
Control of Ni/β-Ga<sub>2</sub>O<sub>3</sub> Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene LayerMadani Labed, Nouredine Sengouga, You Seung Rim
Nanomaterials (Basel, Switzerland)|April 12, 2022
Physical Operations of a Self-Powered IZTO/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode PhotodetectorMadani Labed, Hojoong Kim, Joon Hui Park, et al.
ACS Nano|February 26, 2025
Transferred Graphene Monolayer to β-Ga<sub>2</sub>O<sub>3</sub> as a Diffusion Barrier for Based Power Device ApplicationsMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|February 9, 2024
Ultrahigh Photoresponsivity of W/Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Deep Ultraviolet PhotodiodesMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|October 22, 2024
2D Embedded Ultrawide Bandgap Devices for Extreme Environment ApplicationsMadani Labed, Ji-Yun Moon, Seung-Il Kim, et al.
ACS Nano|December 31, 2025
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga<sub>2</sub>O<sub>3</sub>Madani Labed, Kanghee Shin, Mohammad Tauquir A S Shaikh, et al.
ACS Applied Materials & Interfaces|February 2, 2026
Ultrathin ZrO<sub>2</sub> Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub>Kyong Jae Kim, Eun Seo Jo, Madani Labed, et al.
ACS Applied Materials & Interfaces|July 8, 2025
Electrical Performance and Deep-Level Trap Characterization of p-CuGaO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunctions for Power ElectronicsChowdam Venkata Prasad, Geon-Hee Lee, Jang Hyeok Park, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Nanomaterials (Basel, Switzerland)|March 10, 2022
Control of Ni/β-Ga<sub>2</sub>O<sub>3</sub> Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene LayerMadani Labed, Nouredine Sengouga, You Seung Rim
Nanomaterials (Basel, Switzerland)|April 12, 2022
Physical Operations of a Self-Powered IZTO/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode PhotodetectorMadani Labed, Hojoong Kim, Joon Hui Park, et al.
ACS Nano|February 26, 2025
Transferred Graphene Monolayer to β-Ga<sub>2</sub>O<sub>3</sub> as a Diffusion Barrier for Based Power Device ApplicationsMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|February 9, 2024
Ultrahigh Photoresponsivity of W/Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Deep Ultraviolet PhotodiodesMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|October 22, 2024
2D Embedded Ultrawide Bandgap Devices for Extreme Environment ApplicationsMadani Labed, Ji-Yun Moon, Seung-Il Kim, et al.
ACS Nano|December 31, 2025
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga<sub>2</sub>O<sub>3</sub>Madani Labed, Kanghee Shin, Mohammad Tauquir A S Shaikh, et al.
ACS Applied Materials & Interfaces|February 2, 2026
Ultrathin ZrO<sub>2</sub> Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub>Kyong Jae Kim, Eun Seo Jo, Madani Labed, et al.
ACS Applied Materials & Interfaces|July 8, 2025
Electrical Performance and Deep-Level Trap Characterization of p-CuGaO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunctions for Power ElectronicsChowdam Venkata Prasad, Geon-Hee Lee, Jang Hyeok Park, et al.
Pageof 1