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Marcin Siekacz

Showing results (1-10 of 13) with videos related to

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Optics Express|March 4, 2020
Anomalous photocurrent in wide InGaN quantum wellsArtem Bercha, Witold Trzeciakowski, Grzegorz Muzioł, et al.
Nanomaterials (Basel, Switzerland)|January 24, 2025
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and PolaritiesArtem Bercha, Mikołaj Chlipała, Mateusz Hajdel, et al.
Optics Express|October 29, 2020
Nitride light-emitting diodes for cryogenic temperaturesMikolaj Chlipala, Henryk Turski, Marcin Siekacz, et al.
ACS Photonics|March 24, 2025
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum WellsMateusz Hajdel, Krzysztof Gołyga, Marcin Siekacz, et al.
Optics Express|March 4, 2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodesShyam Bharadwaj, Jeffrey Miller, Kevin Lee, et al.
Materials (Basel, Switzerland)|September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaNHenryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nanoscale|March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etchingMarta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)|January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDsMateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Nature Communications|November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating currentMikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
Crystal Growth & Design|July 10, 2023
Nanostars in Highly Si-Doped GaNMarta Sawicka, Henryk Turski, Kamil Sobczak, et al.
Pageof 2

Showing results (1-10 of 13) with videos related to

Sort By:
Pageof 2
Optics Express|March 4, 2020
Anomalous photocurrent in wide InGaN quantum wellsArtem Bercha, Witold Trzeciakowski, Grzegorz Muzioł, et al.
Nanomaterials (Basel, Switzerland)|January 24, 2025
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and PolaritiesArtem Bercha, Mikołaj Chlipała, Mateusz Hajdel, et al.
Optics Express|October 29, 2020
Nitride light-emitting diodes for cryogenic temperaturesMikolaj Chlipala, Henryk Turski, Marcin Siekacz, et al.
ACS Photonics|March 24, 2025
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum WellsMateusz Hajdel, Krzysztof Gołyga, Marcin Siekacz, et al.
Optics Express|March 4, 2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodesShyam Bharadwaj, Jeffrey Miller, Kevin Lee, et al.
Materials (Basel, Switzerland)|September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaNHenryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nanoscale|March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etchingMarta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)|January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDsMateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Nature Communications|November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating currentMikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
Crystal Growth & Design|July 10, 2023
Nanostars in Highly Si-Doped GaNMarta Sawicka, Henryk Turski, Kamil Sobczak, et al.
Pageof 2