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Marco Fanciulli

Showing results (11-20 of 25) with videos related to

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ACS Applied Materials & Interfaces|February 12, 2014
Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer depositionElena Cianci, Alessandro Molle, Alessio Lamperti, et al.
Frontiers in Neuroscience|November 10, 2016
Analog Memristive Synapse in Spiking Networks Implementing Unsupervised LearningErika Covi, Stefano Brivio, Alexander Serb, et al.
Nanomaterials (Basel, Switzerland)|March 29, 2023
Plasma-Assisted Atomic Layer Deposition of IrO<sub>2</sub> for NeuroelectronicsValerio Di Palma, Andrea Pianalto, Michele Perego, et al.
Nano Letters|February 28, 2012
Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowiresMassimo Longo, Roberto Fallica, Claudia Wiemer, et al.
Nature Nanotechnology|February 3, 2015
Silicene field-effect transistors operating at room temperatureLi Tao, Eugenio Cinquanta, Daniele Chiappe, et al.
ACS Applied Materials & Interfaces|October 20, 2023
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb<sub>2</sub>Te<sub>3</sub>/Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator Heterostructure for Spin-Charge ConversionEmanuele Longo, Lorenzo Locatelli, Polychronis Tsipas, et al.
Scientific Reports|August 23, 2024
Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser dopingJosh W Barkby, Fabrizio Moro, Michele Perego, et al.
Nature Communications|December 22, 2016
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wellsAnna Giorgioni, Stefano Paleari, Stefano Cecchi, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 19, 2013
Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surfaceDaniele Chiappe, Emilio Scalise, Eugenio Cinquanta, et al.
Nano Letters|April 18, 2025
Influence of Metal Interlayers on Spin-Charge Conversion in Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator-Based DevicesEmanuele Longo, Matteo Belli, Claudia Wiemer, et al.
Pageof 3

Showing results (11-20 of 25) with videos related to

Sort By:
Pageof 3
ACS Applied Materials & Interfaces|February 12, 2014
Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer depositionElena Cianci, Alessandro Molle, Alessio Lamperti, et al.
Frontiers in Neuroscience|November 10, 2016
Analog Memristive Synapse in Spiking Networks Implementing Unsupervised LearningErika Covi, Stefano Brivio, Alexander Serb, et al.
Nanomaterials (Basel, Switzerland)|March 29, 2023
Plasma-Assisted Atomic Layer Deposition of IrO<sub>2</sub> for NeuroelectronicsValerio Di Palma, Andrea Pianalto, Michele Perego, et al.
Nano Letters|February 28, 2012
Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowiresMassimo Longo, Roberto Fallica, Claudia Wiemer, et al.
Nature Nanotechnology|February 3, 2015
Silicene field-effect transistors operating at room temperatureLi Tao, Eugenio Cinquanta, Daniele Chiappe, et al.
ACS Applied Materials & Interfaces|October 20, 2023
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb<sub>2</sub>Te<sub>3</sub>/Bi<sub>2</sub>Te<sub>3</sub> Topological Insulator Heterostructure for Spin-Charge ConversionEmanuele Longo, Lorenzo Locatelli, Polychronis Tsipas, et al.
Scientific Reports|August 23, 2024
Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser dopingJosh W Barkby, Fabrizio Moro, Michele Perego, et al.
Nature Communications|December 22, 2016
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wellsAnna Giorgioni, Stefano Paleari, Stefano Cecchi, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 19, 2013
Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surfaceDaniele Chiappe, Emilio Scalise, Eugenio Cinquanta, et al.
Nano Letters|April 18, 2025
Influence of Metal Interlayers on Spin-Charge Conversion in Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator-Based DevicesEmanuele Longo, Matteo Belli, Claudia Wiemer, et al.
Pageof 3