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Maria Merlyne De Souza

Showing results (1-10 of 9) with videos related to

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ACS Applied Materials & Interfaces|December 20, 2016
Nanoionics-Based Three-Terminal Synaptic Device Using Zinc OxidePremlal Balakrishna Pillai, Maria Merlyne De Souza
ACS Applied Electronic Materials|October 31, 2022
Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN HeterostructureHuy-Binh Do, Jinggui Zhou, Maria Merlyne De Souza
ACS Applied Electronic Materials|July 3, 2023
Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaNJinggui Zhou, Huy-Binh Do, Maria Merlyne De Souza
ACS Applied Materials & Interfaces|May 24, 2018
Negative Capacitance beyond Ferroelectric SwitchesAshwani Kumar, Premlal Balakrishna Pillai, Xiaoyao Song, et al.
ACS Applied Materials & Interfaces|March 8, 2018
Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film TransistorsPremlal Balakrishna Pillai, Ashwani Kumar, Xiaoyao Song, et al.
ACS Applied Materials & Interfaces|March 7, 2025
Nano-ionic Solid Electrolyte FET-Based Reservoir Computing for Efficient Temporal Data Classification and ForecastingAnkit Gaurav, Xiaoyao Song, Sanjeev Kumar Manhas, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 27, 2024
Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer InterfaceDani S Assi, Hongli Huang, Vaithinathan Karthikeyan, et al.
Micromachines|August 26, 2023
Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO<sub>2</sub>/InGaAsHuy-Binh Do, Quang-Ho Luc, Phuong V Pham, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 21, 2023
Quantum Topological Neuristors for Advanced Neuromorphic Intelligent SystemsDani S Assi, Hongli Huang, Vaithinathan Karthikeyan, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|December 20, 2016
Nanoionics-Based Three-Terminal Synaptic Device Using Zinc OxidePremlal Balakrishna Pillai, Maria Merlyne De Souza
ACS Applied Electronic Materials|October 31, 2022
Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN HeterostructureHuy-Binh Do, Jinggui Zhou, Maria Merlyne De Souza
ACS Applied Electronic Materials|July 3, 2023
Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaNJinggui Zhou, Huy-Binh Do, Maria Merlyne De Souza
ACS Applied Materials & Interfaces|May 24, 2018
Negative Capacitance beyond Ferroelectric SwitchesAshwani Kumar, Premlal Balakrishna Pillai, Xiaoyao Song, et al.
ACS Applied Materials & Interfaces|March 8, 2018
Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film TransistorsPremlal Balakrishna Pillai, Ashwani Kumar, Xiaoyao Song, et al.
ACS Applied Materials & Interfaces|March 7, 2025
Nano-ionic Solid Electrolyte FET-Based Reservoir Computing for Efficient Temporal Data Classification and ForecastingAnkit Gaurav, Xiaoyao Song, Sanjeev Kumar Manhas, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 27, 2024
Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer InterfaceDani S Assi, Hongli Huang, Vaithinathan Karthikeyan, et al.
Micromachines|August 26, 2023
Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO<sub>2</sub>/InGaAsHuy-Binh Do, Quang-Ho Luc, Phuong V Pham, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 21, 2023
Quantum Topological Neuristors for Advanced Neuromorphic Intelligent SystemsDani S Assi, Hongli Huang, Vaithinathan Karthikeyan, et al.
Pageof 1