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Mario Lanza

Showing results (1-10 of 100) with videos related to

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Materials (Basel, Switzerland)|August 10, 2017
A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force MicroscopeMario Lanza
Science Bulletin|October 20, 2023
Bilayer HfO<sub>2</sub>/Sb<sub>2</sub>O<sub>3</sub> gate dielectric stacks for transistors with 2D semiconducting channelsMario Lanza
Nature Computational Science|October 7, 2025
Pioneering real-time genomic analysis by in-memory computingKaichen Zhu, Mario Lanza
Advanced Materials (Deerfield Beach, Fla.)|December 1, 2022
Electronic Circuits made of 2D MaterialsMario Lanza, Iuliana Radu
Advanced Materials (Deerfield Beach, Fla.)|September 11, 2024
The Effect of Relative Humidity in Conductive Atomic Force MicroscopyYue Yuan, Mario Lanza
Nature Communications|November 11, 2020
Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devicesMario Lanza, Quentin Smets, Cedric Huyghebaert, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 12, 2022
Resistive Switching Crossbar Arrays Based on Layered MaterialsMario Lanza, Fei Hui, Chao Wen, et al.
Nanoscale Horizons|January 10, 2023
Revealing the improved stability of amorphous boron-nitride upon carbon dopingOnurcan Kaya, Luigi Colombo, Aleandro Antidormi, et al.
Nanoscale Research Letters|June 30, 2011
Polycrystallization effects on the nanoscale electrical properties of high-k dielectricsMario Lanza, Vanessa Iglesias, Marc Porti, et al.
Revista Medica De Chile|September 24, 2016
[A review on thoracic ultrasound]Sebastián Fernández-Bussy, Gonzalo Labarca, Mario Lanza, et al.
Pageof 10

Showing results (1-10 of 100) with videos related to

Sort By:
Pageof 10
Materials (Basel, Switzerland)|August 10, 2017
A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force MicroscopeMario Lanza
Science Bulletin|October 20, 2023
Bilayer HfO<sub>2</sub>/Sb<sub>2</sub>O<sub>3</sub> gate dielectric stacks for transistors with 2D semiconducting channelsMario Lanza
Nature Computational Science|October 7, 2025
Pioneering real-time genomic analysis by in-memory computingKaichen Zhu, Mario Lanza
Advanced Materials (Deerfield Beach, Fla.)|December 1, 2022
Electronic Circuits made of 2D MaterialsMario Lanza, Iuliana Radu
Advanced Materials (Deerfield Beach, Fla.)|September 11, 2024
The Effect of Relative Humidity in Conductive Atomic Force MicroscopyYue Yuan, Mario Lanza
Nature Communications|November 11, 2020
Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devicesMario Lanza, Quentin Smets, Cedric Huyghebaert, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 12, 2022
Resistive Switching Crossbar Arrays Based on Layered MaterialsMario Lanza, Fei Hui, Chao Wen, et al.
Nanoscale Horizons|January 10, 2023
Revealing the improved stability of amorphous boron-nitride upon carbon dopingOnurcan Kaya, Luigi Colombo, Aleandro Antidormi, et al.
Nanoscale Research Letters|June 30, 2011
Polycrystallization effects on the nanoscale electrical properties of high-k dielectricsMario Lanza, Vanessa Iglesias, Marc Porti, et al.
Revista Medica De Chile|September 24, 2016
[A review on thoracic ultrasound]Sebastián Fernández-Bussy, Gonzalo Labarca, Mario Lanza, et al.
Pageof 10