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Journal of Applied Crystallography|September 19, 2013
X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substratesPeter Zaumseil, Grzegorz Kozlowski, Yuji Yamamoto, et al.
Nanomaterials (Basel, Switzerland)|October 14, 2022
Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor DepositionMax Franck, Jaroslaw Dabrowski, Markus Andreas Schubert, et al.
Nano Letters|June 3, 2026
Direct Synthesis of Ultrathin Hexagonal Boron Nitride Films on Si(001)Max Franck, Jaroslaw Dabrowski, Markus Andreas Schubert, et al.
Nanomaterials (Basel, Switzerland)|May 13, 2023
Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum DotsKatsunori Makihara, Yuji Yamamoto, Yuki Imai, et al.
Scientific Reports|June 18, 2016
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer depositionGang Niu, Hee-Dong Kim, Robin Roelofs, et al.
Nature Nanotechnology|July 26, 2008
Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 densityWoo Lee, Hee Han, Andriy Lotnyk, et al.
Nanotechnology|October 7, 2017
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVDYuji Yamamoto, Peter Zaumseil, Giovanni Capellini, et al.
ACS Applied Materials & Interfaces|September 8, 2016
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si PillarsOliver Skibitzki, Giovanni Capellini, Yuji Yamamoto, et al.
ACS Applied Materials & Interfaces|September 26, 2014
Oxygen vacancy induced room temperature ferromagnetism in Pr-doped CeO2 thin films on siliconGang Niu, Erwin Hildebrandt, Markus Andreas Schubert, et al.
Scientific Reports|July 26, 2018
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO<sub>2</sub> RRAM devicesAlessandro Grossi, Eduardo Perez, Cristian Zambelli, et al.
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