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Scientific Reports|November 3, 2019
Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical propertiesDuc V Dinh, Nan Hu, Yoshio Honda, et al.
Scientific Reports|March 25, 2021
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithographyGeoffrey Avit, Yoann Robin, Yaqiang Liao, et al.
ACS Applied Materials & Interfaces|September 17, 2020
Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond SubstrateXu Yang, Markus Pristovsek, Shugo Nitta, et al.
Optics Letters|April 29, 2022
Interplay of sidewall damage and light extraction efficiency of micro-LEDsJeong-Hwan Park, Markus Pristovsek, Wentao Cai, et al.
Physica Status Solidi. B, Basic Solid State Physics : PSS|July 28, 2015
Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) siliconMarkus Pristovsek, Yisong Han, Tongtong Zhu, et al.
Chemical Science|June 25, 2021
The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliationJeong-Hwan Park, Xu Yang, Jun-Yeob Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|September 29, 2025
Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001)Xu Yang, Markus Pristovsek, Shugo Nitta, et al.
Nanomaterials (Basel, Switzerland)|September 28, 2021
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN SuperlatticesValery Davydov, Evgenii M Roginskii, Yuri Kitaev, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|April 2, 2026
The Origin of Efficiency in III-Nitride Micro-Light-Emitting DiodesJeong-Hwan Park, Markus Pristovsek, Dong-Pyo Han, et al.
Nanomaterials (Basel, Switzerland)|March 29, 2023
2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC EmittersValentin Jmerik, Dmitrii Nechaev, Alexey Semenov, et al.
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