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Martin Frentrup

Showing results (1-10 of 5) with videos related to

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Nanotechnology|July 2, 2024
Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum wellAbhiram Gundimeda, Gunnar Kusch, Martin Frentrup, et al.
Nanoscale Advances|May 5, 2023
Complications in silane-assisted GaN nanowire growthNian Jiang, Saptarsi Ghosh, Martin Frentrup, et al.
Physica Status Solidi. B, Basic Solid State Physics : PSS|July 28, 2015
Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) siliconMarkus Pristovsek, Yisong Han, Tongtong Zhu, et al.
Micromachines|January 9, 2021
Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap EngineeringArmin Barthel, Joseph Roberts, Mari Napari, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 23, 2025
Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on SiliconSaptarsi Ghosh, Martin Frentrup, Alexander M Hinz, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Nanotechnology|July 2, 2024
Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum wellAbhiram Gundimeda, Gunnar Kusch, Martin Frentrup, et al.
Nanoscale Advances|May 5, 2023
Complications in silane-assisted GaN nanowire growthNian Jiang, Saptarsi Ghosh, Martin Frentrup, et al.
Physica Status Solidi. B, Basic Solid State Physics : PSS|July 28, 2015
Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) siliconMarkus Pristovsek, Yisong Han, Tongtong Zhu, et al.
Micromachines|January 9, 2021
Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap EngineeringArmin Barthel, Joseph Roberts, Mari Napari, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 23, 2025
Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on SiliconSaptarsi Ghosh, Martin Frentrup, Alexander M Hinz, et al.
Pageof 1