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Martin Stutzmann

Showing results (11-20 of 66) with videos related to

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Physical Review Letters|June 4, 2011
Electrical detection of coherent nuclear spin oscillations in phosphorus-doped silicon using pulsed ENDORFelix Hoehne, Lukas Dreher, Hans Huebl, et al.
ACS Applied Materials & Interfaces|January 24, 2024
Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption SpectroscopyFelix Rauh, Johannes Dittloff, Moritz Thun, et al.
Biophysical Journal|May 8, 2007
Light-induced dielectrophoretic manipulation of DNAMarco Hoeb, Joachim O Rädler, Stefan Klein, et al.
Physical Review Letters|February 4, 2017
Efficient Electrical Spin Readout of NV^{-} Centers in DiamondFlorian M Hrubesch, Georg Braunbeck, Martin Stutzmann, et al.
ACS Applied Materials & Interfaces|September 23, 2011
Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiCRoland Dietmueller, Helmut Nesswetter, Sebastian J Schoell, et al.
Journal of the American Chemical Society|September 28, 2011
Role of structural order and excess energy on ultrafast free charge generation in hybrid polythiophene/Si photovoltaics probed in real time by near-infrared broadband transient absorptionDaniel Herrmann, Sabrina Niesar, Christina Scharsich, et al.
Nanotechnology|January 20, 2023
Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxyFlorian Pantle, Simon Wörle, Monika Karlinger, et al.
Nanoscale Advances|March 31, 2023
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substratesFlorian Pantle, Fabian Becker, Max Kraut, et al.
Nanoscale Advances|September 22, 2022
Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substratesFlorian Pantle, Fabian Becker, Max Kraut, et al.
Physical Review Letters|June 4, 2008
Spin echoes in the charge transport through phosphorus donors in siliconHans Huebl, Felix Hoehne, Benno Grolik, et al.
Pageof 7

Showing results (11-20 of 66) with videos related to

Sort By:
Pageof 7
Physical Review Letters|June 4, 2011
Electrical detection of coherent nuclear spin oscillations in phosphorus-doped silicon using pulsed ENDORFelix Hoehne, Lukas Dreher, Hans Huebl, et al.
ACS Applied Materials & Interfaces|January 24, 2024
Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption SpectroscopyFelix Rauh, Johannes Dittloff, Moritz Thun, et al.
Biophysical Journal|May 8, 2007
Light-induced dielectrophoretic manipulation of DNAMarco Hoeb, Joachim O Rädler, Stefan Klein, et al.
Physical Review Letters|February 4, 2017
Efficient Electrical Spin Readout of NV^{-} Centers in DiamondFlorian M Hrubesch, Georg Braunbeck, Martin Stutzmann, et al.
ACS Applied Materials & Interfaces|September 23, 2011
Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiCRoland Dietmueller, Helmut Nesswetter, Sebastian J Schoell, et al.
Journal of the American Chemical Society|September 28, 2011
Role of structural order and excess energy on ultrafast free charge generation in hybrid polythiophene/Si photovoltaics probed in real time by near-infrared broadband transient absorptionDaniel Herrmann, Sabrina Niesar, Christina Scharsich, et al.
Nanotechnology|January 20, 2023
Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxyFlorian Pantle, Simon Wörle, Monika Karlinger, et al.
Nanoscale Advances|March 31, 2023
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substratesFlorian Pantle, Fabian Becker, Max Kraut, et al.
Nanoscale Advances|September 22, 2022
Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substratesFlorian Pantle, Fabian Becker, Max Kraut, et al.
Physical Review Letters|June 4, 2008
Spin echoes in the charge transport through phosphorus donors in siliconHans Huebl, Felix Hoehne, Benno Grolik, et al.
Pageof 7