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Marvin H Zoellner

Showing results (1-10 of 6) with videos related to

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ACS Applied Materials & Interfaces|November 7, 2015
Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray NanodiffractionMarie-Ingrid Richard, Marvin H Zoellner, Gilbert A Chahine, et al.
ACS Applied Materials & Interfaces|April 15, 2015
Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction MicroscopyMarvin H Zoellner, Marie-Ingrid Richard, Gilbert A Chahine, et al.
ACS Applied Electronic Materials|December 30, 2024
Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth EnvironmentChristoph Wilflingseder, Johannes Aberl, Enrique Prado Navarrete, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 12, 2025
Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum StructuresOmar Concepción, Ambrishkumar J Devaiya, Marvin H Zoellner, et al.
ACS Applied Materials & Interfaces|January 4, 2023
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceCedric Corley-Wiciak, Carsten Richter, Marvin H Zoellner, et al.
Small Methods|July 30, 2024
Full Picture of Lattice Deformation in a Ge<sub>1 - x</sub>Sn<sub>x</sub> Micro-Disk by 5D X-ray Diffraction MicroscopyCedric Corley-Wiciak, Marvin H Zoellner, Agnieszka A Corley-Wiciak, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|November 7, 2015
Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray NanodiffractionMarie-Ingrid Richard, Marvin H Zoellner, Gilbert A Chahine, et al.
ACS Applied Materials & Interfaces|April 15, 2015
Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction MicroscopyMarvin H Zoellner, Marie-Ingrid Richard, Gilbert A Chahine, et al.
ACS Applied Electronic Materials|December 30, 2024
Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth EnvironmentChristoph Wilflingseder, Johannes Aberl, Enrique Prado Navarrete, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 12, 2025
Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum StructuresOmar Concepción, Ambrishkumar J Devaiya, Marvin H Zoellner, et al.
ACS Applied Materials & Interfaces|January 4, 2023
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceCedric Corley-Wiciak, Carsten Richter, Marvin H Zoellner, et al.
Small Methods|July 30, 2024
Full Picture of Lattice Deformation in a Ge<sub>1 - x</sub>Sn<sub>x</sub> Micro-Disk by 5D X-ray Diffraction MicroscopyCedric Corley-Wiciak, Marvin H Zoellner, Agnieszka A Corley-Wiciak, et al.
Pageof 1