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ACS Omega|August 29, 2019
How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?Lingming Yang, Adam Charnas, Gang Qiu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|September 20, 2021
Spalling-Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release LayerEric W Blanton, Michael J Motala, Timothy A Prusnick, et al.
ACS Applied Materials & Interfaces|April 17, 2020
Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release LayerMichael J Motala, Eric W Blanton, Albert Hilton, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 3, 2017
Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency DevicesNicholas R Glavin, Kelson D Chabak, Eric R Heller, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2018
Synthesis of Crystalline Black Phosphorus Thin Film on SapphireCheng Li, Ye Wu, Bingchen Deng, et al.
Nature Nanotechnology|December 3, 2021
Light-matter coupling in large-area van der Waals superlatticesPawan Kumar, Jason Lynch, Baokun Song, et al.
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