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Nanotechnology|February 24, 2017
Nano-cone resistive memory for ultralow power operationSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.
ACS Applied Materials & Interfaces|November 5, 2020
Realization of Biomimetic Synaptic Functions in a One-Cell Organic Resistive Switching Device Using the Diffusive Parameter of Conductive FilamentsSin-Hyung Lee, Hea-Lim Park, Min-Hoi Kim, et al.
Physical Chemistry Chemical Physics : PCCP|July 14, 2017
Ultralow power switching in a silicon-rich SiN<sub>y</sub>/SiN<sub>x</sub> double-layer resistive memory deviceSungjun Kim, Yao-Feng Chang, Min-Hwi Kim, et al.
Nanoscale Research Letters|August 25, 2018
Dual Functions of V/SiO<sub>x</sub>/AlO<sub>y</sub>/p<sup>++</sup>Si Device as Selector and MemorySungjun Kim, Chih-Yang Lin, Min-Hwi Kim, et al.
Nanomaterials (Basel, Switzerland)|May 28, 2020
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si SubstrateMehr Khalid Rahmani, Min-Hwi Kim, Fayyaz Hussain, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.
Nanoscale|December 12, 2018
Neuronal dynamics in HfO<sub>x</sub>/AlO<sub>y</sub>-based homeothermic synaptic memristors with low-power and homogeneous resistive switchingSungjun Kim, Jia Chen, Ying-Chen Chen, et al.
ACS Applied Materials & Interfaces|July 2, 2020
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic EngineeringJinju Lee, Ji-Ho Ryu, Boram Kim, et al.
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