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Nanotechnology
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December 14, 2020
Design of n<sup>+</sup>-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector
Byoung-Seok Lee, Min-Won Kim, Ji-Hun Kim, et al.
Nanotechnology
|
December 21, 2022
Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
Min-Won Kim, Ji-Hun Kim, Hyeon-Jun Kim, et al.
Nanotechnology
|
November 17, 2018
Performance of thyristor memory device formed by a wet etching process
Jisoo Yoo, Gyujin Oh, Min-Won Kim, et al.
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of 1
Search research articles
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Showing results (1-10 of 3) with videos related to
Sort By:
Page
of 1
Nanotechnology
|
December 14, 2020
Design of n<sup>+</sup>-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector
Byoung-Seok Lee, Min-Won Kim, Ji-Hun Kim, et al.
Nanotechnology
|
December 21, 2022
Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
Min-Won Kim, Ji-Hun Kim, Hyeon-Jun Kim, et al.
Nanotechnology
|
November 17, 2018
Performance of thyristor memory device formed by a wet etching process
Jisoo Yoo, Gyujin Oh, Min-Won Kim, et al.
Page
of 1