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Ming-Lun Lee

Showing results (11-20 of 25) with videos related to

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Nanoscale Horizons|September 16, 2024
Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe<sub>2</sub>/2H-MoTe<sub>2</sub> heterojunctions grown by chemical vapor depositionPing-Feng Chi, Jing-Jie Wang, Jing-Wen Zhang, et al.
Nanotechnology|July 3, 2024
Large-area and few-layered 1T'-MoTe<sub>2</sub>thin films grown by cold-wall chemical vapor depositionPing-Feng Chi, Yung-Lan Chuang, Zide Yu, et al.
Optics Express|December 18, 2010
InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN filmJinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, et al.
Optics Express|October 10, 2013
Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templatesMing-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, et al.
Optics Express|November 29, 2012
Vertical InGaN light-emitting diode with a retained patterned sapphire layerY C Yang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|May 14, 2015
Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphorJinn-Kong Sheu, Fu-Bang Chen, Yen-Chin Wang, et al.
Optics Express|May 14, 2015
GaN-based photon-recycling green light-emitting diodes with vertical-conduction structureJinn-Kong Sheu, Fu-Bang Chen, Wei-Yu Yen, et al.
Optics Express|January 18, 2013
Vertical InGaN light-emitting diode with a retained patterned sapphire layerY C Yang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|November 24, 2011
Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetectionFeng-Wen Huang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|October 19, 2017
Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctionsYen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, et al.
Pageof 3

Showing results (11-20 of 25) with videos related to

Sort By:
Pageof 3
Nanoscale Horizons|September 16, 2024
Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe<sub>2</sub>/2H-MoTe<sub>2</sub> heterojunctions grown by chemical vapor depositionPing-Feng Chi, Jing-Jie Wang, Jing-Wen Zhang, et al.
Nanotechnology|July 3, 2024
Large-area and few-layered 1T'-MoTe<sub>2</sub>thin films grown by cold-wall chemical vapor depositionPing-Feng Chi, Yung-Lan Chuang, Zide Yu, et al.
Optics Express|December 18, 2010
InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN filmJinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, et al.
Optics Express|October 10, 2013
Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templatesMing-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, et al.
Optics Express|November 29, 2012
Vertical InGaN light-emitting diode with a retained patterned sapphire layerY C Yang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|May 14, 2015
Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphorJinn-Kong Sheu, Fu-Bang Chen, Yen-Chin Wang, et al.
Optics Express|May 14, 2015
GaN-based photon-recycling green light-emitting diodes with vertical-conduction structureJinn-Kong Sheu, Fu-Bang Chen, Wei-Yu Yen, et al.
Optics Express|January 18, 2013
Vertical InGaN light-emitting diode with a retained patterned sapphire layerY C Yang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|November 24, 2011
Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetectionFeng-Wen Huang, Jinn-Kong Sheu, Ming-Lun Lee, et al.
Optics Express|October 19, 2017
Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctionsYen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, et al.
Pageof 3