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Materials (Basel, Switzerland)|December 9, 2023
Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO2 Bilayer DeviceDongyeol Ju, Minsuk Koo, Sungjun KimBiomimetics (Basel, Switzerland)|September 27, 2024
Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic CharacteristicsGyeongpyo Kim, Seoyoung Park, Minsuk Koo, et al.The Journal of Chemical Physics|August 26, 2024
HfAlOx-based ferroelectric memristor for nociceptor and synapse functionsDongyeol Ju, Yongjin Park, Minseo Noh, et al.ACS Applied Materials & Interfaces|April 30, 2024
Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type MemristorDongyeol Ju, Sungjoon Kim, Kyungchul Park, et al.Physical Chemistry Chemical Physics : PCCP|July 24, 2024
Enhancing simulation feasibility for multi-layer 2D MoS2 RRAM devices: reliability performance learnings from a passive network modelSeonjeong Lee, Yifu Huang, Yao-Feng Chang, et al.Physical Review Applied|June 1, 2026
Distance Computation Based on Coupled Spin-Torque Oscillators: Application to Image ProcessingMinsuk Koo, M R Pufall, Yong Shim, et al.Pageof 1