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Mohsen Nami

Showing results (1-10 of 12) with videos related to

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Optics Express|January 22, 2015
Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowiresMohsen Nami, Daniel F Feezell
Micromachines|January 21, 2022
Designing Sensitivity: A Comparative Analysis of Microelectrode Topologies for Electrochemical Oxygen Sensing in Biomedical ApplicationsDaniel T Bacheschi, Evan Z Strittmatter, Sonya Sawtelle, et al.
ACS Applied Materials & Interfaces|October 27, 2021
Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl EtchingBingjun Li, Sizhen Wang, Mohsen Nami, et al.
Nanotechnology|April 8, 2017
GaN nanowire tips for nanoscale atomic force microscopyMahmoud Behzadirad, Mohsen Nami, Ashwin K Rishinaramagalam, et al.
Optics Express|May 15, 2013
Tunable microwave signal generator with an optically-injected 1310 nm QD-DFB laserAntonio Hurtado, Jesse Mee, Mohsen Nami, et al.
Optics Express|October 19, 2017
Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficientsMorteza Monavarian, Arman Rashidi, Andrew Aragon, et al.
Nanotechnology|December 2, 2016
Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxyMohsen Nami, Rhett F Eller, Serdal Okur, et al.
ACS Nano|February 6, 2018
Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire SubstrateMahmoud Behzadirad, Mohsen Nami, Neal Wostbrock, et al.
Optics Express|March 10, 2018
Internal quantum efficiency and carrier dynamics in semipolar (20<span style="text-decoration: overline">21</span>) InGaN/GaN light-emitting diodesSerdal Okur, Mohsen Nami, Ashwin K Rishinaramangalam, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 15, 2022
Rapid Screen for Antiviral T-Cell Immunity with Nanowire Electrochemical BiosensorsMohsen Nami, Patrick Han, Douglas Hanlon, et al.
Pageof 2

Showing results (1-10 of 12) with videos related to

Sort By:
Pageof 2
Optics Express|January 22, 2015
Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowiresMohsen Nami, Daniel F Feezell
Micromachines|January 21, 2022
Designing Sensitivity: A Comparative Analysis of Microelectrode Topologies for Electrochemical Oxygen Sensing in Biomedical ApplicationsDaniel T Bacheschi, Evan Z Strittmatter, Sonya Sawtelle, et al.
ACS Applied Materials & Interfaces|October 27, 2021
Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl EtchingBingjun Li, Sizhen Wang, Mohsen Nami, et al.
Nanotechnology|April 8, 2017
GaN nanowire tips for nanoscale atomic force microscopyMahmoud Behzadirad, Mohsen Nami, Ashwin K Rishinaramagalam, et al.
Optics Express|May 15, 2013
Tunable microwave signal generator with an optically-injected 1310 nm QD-DFB laserAntonio Hurtado, Jesse Mee, Mohsen Nami, et al.
Optics Express|October 19, 2017
Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficientsMorteza Monavarian, Arman Rashidi, Andrew Aragon, et al.
Nanotechnology|December 2, 2016
Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxyMohsen Nami, Rhett F Eller, Serdal Okur, et al.
ACS Nano|February 6, 2018
Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire SubstrateMahmoud Behzadirad, Mohsen Nami, Neal Wostbrock, et al.
Optics Express|March 10, 2018
Internal quantum efficiency and carrier dynamics in semipolar (20<span style="text-decoration: overline">21</span>) InGaN/GaN light-emitting diodesSerdal Okur, Mohsen Nami, Ashwin K Rishinaramangalam, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 15, 2022
Rapid Screen for Antiviral T-Cell Immunity with Nanowire Electrochemical BiosensorsMohsen Nami, Patrick Han, Douglas Hanlon, et al.
Pageof 2