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Monemar

Showing results (91-100 of 120) with videos related to

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Physical Review. B, Condensed Matter|February 15, 1991
Time-resolved measurements of the radiative recombination in GaAs/AlxGa1-xAs heterostructuresBergman, Zhao, Holtz, et al.
Physical Review. B, Condensed Matter|November 15, 1995
Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structuresGodlewski, Lundström, Zhao, et al.
Physical Review. B, Condensed Matter|December 15, 1994
Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wellsHarris, Monemar, Kalt, et al.
Physical Review. B, Condensed Matter|October 15, 1996
Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctionsLundström, Dalfors, Holtz, et al.
Physical Review. B, Condensed Matter|September 15, 1994
S-Cu-related metastable complex defect in Si by optical detection of magnetic resonanceChen, Singh, Monemar, et al.
Nanotechnology|January 19, 2011
Growth of GaN nanotubes by halide vapor phase epitaxyCarl Hemmingsson, Galia Pozina, Sergey Khromov, et al.
Physical Review Letters|July 19, 1993
Mechanism of the configurational change of metastable defects in siliconChen, Svensson, Janzén, et al.
Physical Review Letters|May 2, 1994
Observation of rapid direct charge transfer between deep defects in siliconFrens, Bennebroek, Zakrzewski, et al.
Physical Review. B, Condensed Matter|April 15, 1994
Magnetic properties of the S-like bound hole states in GaAs/AlxGa1-xAs quantum wellsZhao, Holtz, Pasquarello, et al.
Physical Review. B, Condensed Matter|August 15, 1994
Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wellsHoltz, Zhao, Ferreira, et al.
Pageof 12

Showing results (91-100 of 120) with videos related to

Sort By:
Pageof 12
Physical Review. B, Condensed Matter|February 15, 1991
Time-resolved measurements of the radiative recombination in GaAs/AlxGa1-xAs heterostructuresBergman, Zhao, Holtz, et al.
Physical Review. B, Condensed Matter|November 15, 1995
Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structuresGodlewski, Lundström, Zhao, et al.
Physical Review. B, Condensed Matter|December 15, 1994
Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wellsHarris, Monemar, Kalt, et al.
Physical Review. B, Condensed Matter|October 15, 1996
Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctionsLundström, Dalfors, Holtz, et al.
Physical Review. B, Condensed Matter|September 15, 1994
S-Cu-related metastable complex defect in Si by optical detection of magnetic resonanceChen, Singh, Monemar, et al.
Nanotechnology|January 19, 2011
Growth of GaN nanotubes by halide vapor phase epitaxyCarl Hemmingsson, Galia Pozina, Sergey Khromov, et al.
Physical Review Letters|July 19, 1993
Mechanism of the configurational change of metastable defects in siliconChen, Svensson, Janzén, et al.
Physical Review Letters|May 2, 1994
Observation of rapid direct charge transfer between deep defects in siliconFrens, Bennebroek, Zakrzewski, et al.
Physical Review. B, Condensed Matter|April 15, 1994
Magnetic properties of the S-like bound hole states in GaAs/AlxGa1-xAs quantum wellsZhao, Holtz, Pasquarello, et al.
Physical Review. B, Condensed Matter|August 15, 1994
Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wellsHoltz, Zhao, Ferreira, et al.
Pageof 12