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Monemar

Showing results (31-40 of 120) with videos related to

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Physical Review. B, Condensed Matter|August 15, 1988
Infrared absorption studies of the divacancy in silicon: New properties of the singly negative charge stateSvensson, Svensson, Monemar
Physical Review. B, Condensed Matter|May 15, 1989
Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAsWang, Monemar, Ahlström
Physical Review. B, Condensed Matter|September 15, 1987
Electronic structure of the 1.429-eV complex neutral defect in GaAs from tunable-dye-laser spectroscopyHoltz, Zhao, Monemar
Physical Review. B, Condensed Matter|February 15, 1988
Two deep (PGa-Cu)-related neutral complex defects in GaP studied with optically detected magnetic resonanceChen, Monemar, Godlewski
Physical Review. B, Condensed Matter|July 15, 1985
Optical properties of Ag-related centers in bulk ZnSeHoltz, Monemar, Loykowski
Physical Review. B, Condensed Matter|December 15, 1988
Optical detection of microwave-induced impact ionization of bound excitons in siliconWeman, Godlewski, Monemar
Physical Review. B, Condensed Matter|March 15, 1986
Electronic properties of an electron-attractive complex neutral defect in GaAsMonemar, Gislason, Chen, et al.
Physical Review. B, Condensed Matter|July 15, 1990
Time-resolved zero-field optically detected magnetic-resonance study of the (Cu-Li)V neutral defect complex in GaPDonckers, Schmidt, Chen, et al.
Physical Review. B, Condensed Matter|November 15, 1989
Optically detected magnetic resonance of a thermally induced deep center in electron-irradiated siliconChen, Awadelkarim, Weman, et al.
Physical Review. B, Condensed Matter|August 15, 1993
Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limitHarris, Monemar, Kalt, et al.
Pageof 12

Showing results (31-40 of 120) with videos related to

Sort By:
Pageof 12
Physical Review. B, Condensed Matter|August 15, 1988
Infrared absorption studies of the divacancy in silicon: New properties of the singly negative charge stateSvensson, Svensson, Monemar
Physical Review. B, Condensed Matter|May 15, 1989
Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAsWang, Monemar, Ahlström
Physical Review. B, Condensed Matter|September 15, 1987
Electronic structure of the 1.429-eV complex neutral defect in GaAs from tunable-dye-laser spectroscopyHoltz, Zhao, Monemar
Physical Review. B, Condensed Matter|February 15, 1988
Two deep (PGa-Cu)-related neutral complex defects in GaP studied with optically detected magnetic resonanceChen, Monemar, Godlewski
Physical Review. B, Condensed Matter|July 15, 1985
Optical properties of Ag-related centers in bulk ZnSeHoltz, Monemar, Loykowski
Physical Review. B, Condensed Matter|December 15, 1988
Optical detection of microwave-induced impact ionization of bound excitons in siliconWeman, Godlewski, Monemar
Physical Review. B, Condensed Matter|March 15, 1986
Electronic properties of an electron-attractive complex neutral defect in GaAsMonemar, Gislason, Chen, et al.
Physical Review. B, Condensed Matter|July 15, 1990
Time-resolved zero-field optically detected magnetic-resonance study of the (Cu-Li)V neutral defect complex in GaPDonckers, Schmidt, Chen, et al.
Physical Review. B, Condensed Matter|November 15, 1989
Optically detected magnetic resonance of a thermally induced deep center in electron-irradiated siliconChen, Awadelkarim, Weman, et al.
Physical Review. B, Condensed Matter|August 15, 1993
Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1-xAs quantum wells from below to above the metallic limitHarris, Monemar, Kalt, et al.
Pageof 12