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Monemar

Showing results (41-50 of 120) with videos related to

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Physical Review. B, Condensed Matter|August 15, 1990
Strain-induced quantum confinement of carriers due to extended defects in siliconWeman, Monemar, Oehrlein, et al.
Physical Review. B, Condensed Matter|September 15, 1987
Electronic structure of the 2.3149-eV complex defect in Ag-doped ZnTeMonemar, Chen, Holtz, et al.
Physical Review. B, Condensed Matter|September 15, 1988
Optical properties of a neutral Cu-C complex defect in GaPGislason, Monemar, Bergman, et al.
Physical Review. B, Condensed Matter|January 15, 1990
Defect annealing in electron-irradiated boron-doped siliconAwadelkarim, Chen, Weman, et al.
Physical Review Letters|September 30, 1991
Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in siliconChen, Monemar, Janzén, et al.
Physical Review. B, Condensed Matter|September 15, 1990
Intensity of exciton luminescence in silicon in a weak magnetic fieldChen, Awadelkarim, Weman, et al.
Physical Review. B, Condensed Matter|March 15, 1990
Steady-state level-anticrossing spectra for bound-exciton triplets associated with complex defects in semiconductorsChen, Godlewski, Monemar, et al.
Physical Review. B, Condensed Matter|February 15, 1992
Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1-xAs single quantum wellsHarris, Monemar, Brunthaler, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Novel recombination mechanism for interacting bound-exciton complexes in Cu-doped ZnTeHoltz, Monemar, Gislason, et al.
Physical Review. B, Condensed Matter|July 15, 1988
Investigation of the (Cu-Li)-related 2.172-eV bound exciton in GaP with optically detected magnetic resonanceChen, Monemar, Godlewski, et al.
Pageof 12

Showing results (41-50 of 120) with videos related to

Sort By:
Pageof 12
Physical Review. B, Condensed Matter|August 15, 1990
Strain-induced quantum confinement of carriers due to extended defects in siliconWeman, Monemar, Oehrlein, et al.
Physical Review. B, Condensed Matter|September 15, 1987
Electronic structure of the 2.3149-eV complex defect in Ag-doped ZnTeMonemar, Chen, Holtz, et al.
Physical Review. B, Condensed Matter|September 15, 1988
Optical properties of a neutral Cu-C complex defect in GaPGislason, Monemar, Bergman, et al.
Physical Review. B, Condensed Matter|January 15, 1990
Defect annealing in electron-irradiated boron-doped siliconAwadelkarim, Chen, Weman, et al.
Physical Review Letters|September 30, 1991
Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in siliconChen, Monemar, Janzén, et al.
Physical Review. B, Condensed Matter|September 15, 1990
Intensity of exciton luminescence in silicon in a weak magnetic fieldChen, Awadelkarim, Weman, et al.
Physical Review. B, Condensed Matter|March 15, 1990
Steady-state level-anticrossing spectra for bound-exciton triplets associated with complex defects in semiconductorsChen, Godlewski, Monemar, et al.
Physical Review. B, Condensed Matter|February 15, 1992
Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1-xAs single quantum wellsHarris, Monemar, Brunthaler, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Novel recombination mechanism for interacting bound-exciton complexes in Cu-doped ZnTeHoltz, Monemar, Gislason, et al.
Physical Review. B, Condensed Matter|July 15, 1988
Investigation of the (Cu-Li)-related 2.172-eV bound exciton in GaP with optically detected magnetic resonanceChen, Monemar, Godlewski, et al.
Pageof 12