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Physical Review. B, Condensed Matter
|
August 15, 1990
Strain-induced quantum confinement of carriers due to extended defects in silicon
Weman, Monemar, Oehrlein, et al.
Physical Review. B, Condensed Matter
|
September 15, 1987
Electronic structure of the 2.3149-eV complex defect in Ag-doped ZnTe
Monemar, Chen, Holtz, et al.
Physical Review. B, Condensed Matter
|
September 15, 1988
Optical properties of a neutral Cu-C complex defect in GaP
Gislason, Monemar, Bergman, et al.
Physical Review. B, Condensed Matter
|
January 15, 1990
Defect annealing in electron-irradiated boron-doped silicon
Awadelkarim, Chen, Weman, et al.
Physical Review Letters
|
September 30, 1991
Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in silicon
Chen, Monemar, Janzén, et al.
Physical Review. B, Condensed Matter
|
September 15, 1990
Intensity of exciton luminescence in silicon in a weak magnetic field
Chen, Awadelkarim, Weman, et al.
Physical Review. B, Condensed Matter
|
March 15, 1990
Steady-state level-anticrossing spectra for bound-exciton triplets associated with complex defects in semiconductors
Chen, Godlewski, Monemar, et al.
Physical Review. B, Condensed Matter
|
February 15, 1992
Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1-xAs single quantum wells
Harris, Monemar, Brunthaler, et al.
Physical Review. B, Condensed Matter
|
September 15, 1985
Novel recombination mechanism for interacting bound-exciton complexes in Cu-doped ZnTe
Holtz, Monemar, Gislason, et al.
Physical Review. B, Condensed Matter
|
July 15, 1988
Investigation of the (Cu-Li)-related 2.172-eV bound exciton in GaP with optically detected magnetic resonance
Chen, Monemar, Godlewski, et al.
Page
of 12
Search research articles
Search
Showing results (41-50 of 120) with videos related to
Sort By:
Page
of 12
Physical Review. B, Condensed Matter
|
August 15, 1990
Strain-induced quantum confinement of carriers due to extended defects in silicon
Weman, Monemar, Oehrlein, et al.
Physical Review. B, Condensed Matter
|
September 15, 1987
Electronic structure of the 2.3149-eV complex defect in Ag-doped ZnTe
Monemar, Chen, Holtz, et al.
Physical Review. B, Condensed Matter
|
September 15, 1988
Optical properties of a neutral Cu-C complex defect in GaP
Gislason, Monemar, Bergman, et al.
Physical Review. B, Condensed Matter
|
January 15, 1990
Defect annealing in electron-irradiated boron-doped silicon
Awadelkarim, Chen, Weman, et al.
Physical Review Letters
|
September 30, 1991
Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in silicon
Chen, Monemar, Janzén, et al.
Physical Review. B, Condensed Matter
|
September 15, 1990
Intensity of exciton luminescence in silicon in a weak magnetic field
Chen, Awadelkarim, Weman, et al.
Physical Review. B, Condensed Matter
|
March 15, 1990
Steady-state level-anticrossing spectra for bound-exciton triplets associated with complex defects in semiconductors
Chen, Godlewski, Monemar, et al.
Physical Review. B, Condensed Matter
|
February 15, 1992
Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1-xAs single quantum wells
Harris, Monemar, Brunthaler, et al.
Physical Review. B, Condensed Matter
|
September 15, 1985
Novel recombination mechanism for interacting bound-exciton complexes in Cu-doped ZnTe
Holtz, Monemar, Gislason, et al.
Physical Review. B, Condensed Matter
|
July 15, 1988
Investigation of the (Cu-Li)-related 2.172-eV bound exciton in GaP with optically detected magnetic resonance
Chen, Monemar, Godlewski, et al.
Page
of 12