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Monemar

Showing results (51-60 of 120) with videos related to

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Physical Review. B, Condensed Matter|September 15, 1995
Transfer mechanism between pseudodonor excited singlet and triplet states of the S-Cu complex defect in siliconFrens, Braat, Schmidt, et al.
Physical Review. B, Condensed Matter|July 15, 1994
Free and acceptor-bound excitons in the transition region between two-dimensional and quasi-three-dimensional GaAs/AlxGa1-xAs systemsZhao, Holtz, Harris, et al.
Physical Review. B, Condensed Matter|November 15, 1992
Zero-field optical detection of magnetic resonance on a metastable sulfur-pair-related defect in silicon: Evidence for a Cu constituentFrens, Bennebroek, Schmidt, et al.
Physical Review Letters|November 11, 1996
Identification of Grown-In Efficient Nonradiative Recombination Centers in Molecular Beam Epitaxial SiliconChen, Buyanova, Ni, et al.
Physical Review. B, Condensed Matter|October 15, 1994
Infrared-absorption spectra of acceptors confined in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic fieldZhao, Pasquarello, Holtz, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAsGislason, Monemar, Wang, et al.
Physical Review. B, Condensed Matter|April 15, 1987
Electronic properties of a complex Cu-related acceptor with a bound exciton at 2.3423 eV in ZnTeChen, Monemar, Holtz, et al.
Physical Review. B, Condensed Matter|April 15, 1987
Electronic structure of a hole-attractive neutral Cu-related complex-defect bound exciton at 2.345 eV in ZnTeChen, Zhao, Monemar, et al.
Physical Review. B, Condensed Matter|July 15, 1994
Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic fieldZhao, Holtz, Pasquarello, et al.
Physical Review. B, Condensed Matter|February 15, 1988
Optically detected magnetic resonance studies of the 1.911-eV Cu-related complex in GaPChen, Monemar, Gislason, et al.
Pageof 12

Showing results (51-60 of 120) with videos related to

Sort By:
Pageof 12
Physical Review. B, Condensed Matter|September 15, 1995
Transfer mechanism between pseudodonor excited singlet and triplet states of the S-Cu complex defect in siliconFrens, Braat, Schmidt, et al.
Physical Review. B, Condensed Matter|July 15, 1994
Free and acceptor-bound excitons in the transition region between two-dimensional and quasi-three-dimensional GaAs/AlxGa1-xAs systemsZhao, Holtz, Harris, et al.
Physical Review. B, Condensed Matter|November 15, 1992
Zero-field optical detection of magnetic resonance on a metastable sulfur-pair-related defect in silicon: Evidence for a Cu constituentFrens, Bennebroek, Schmidt, et al.
Physical Review Letters|November 11, 1996
Identification of Grown-In Efficient Nonradiative Recombination Centers in Molecular Beam Epitaxial SiliconChen, Buyanova, Ni, et al.
Physical Review. B, Condensed Matter|October 15, 1994
Infrared-absorption spectra of acceptors confined in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic fieldZhao, Pasquarello, Holtz, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAsGislason, Monemar, Wang, et al.
Physical Review. B, Condensed Matter|April 15, 1987
Electronic properties of a complex Cu-related acceptor with a bound exciton at 2.3423 eV in ZnTeChen, Monemar, Holtz, et al.
Physical Review. B, Condensed Matter|April 15, 1987
Electronic structure of a hole-attractive neutral Cu-related complex-defect bound exciton at 2.345 eV in ZnTeChen, Zhao, Monemar, et al.
Physical Review. B, Condensed Matter|July 15, 1994
Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic fieldZhao, Holtz, Pasquarello, et al.
Physical Review. B, Condensed Matter|February 15, 1988
Optically detected magnetic resonance studies of the 1.911-eV Cu-related complex in GaPChen, Monemar, Gislason, et al.
Pageof 12