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Monemar

Showing results (71-80 of 120) with videos related to

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Physical Review. B, Condensed Matter|August 15, 1994
Binding energies and diamagnetic shifts for free excitons in symmetric coupled double quantum wellsZhao, Monemar, Holtz, et al.
Physical Review. B, Condensed Matter|January 15, 1995
Optically detected magnetic-resonance study of a metastable selenium-related center in siliconSörman, Chen, Henry, et al.
Physical Review. B, Condensed Matter|August 15, 1994
Shake-up intersubband processes in quantum-well luminescenceHoltz, Zhao, Monemar, et al.
Physical Review. B, Condensed Matter|April 15, 1996
Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layersBuyanova, Chen, Henry, et al.
Physical Review. B, Condensed Matter|January 15, 1996
Fermi-edge singularity in p-type modulation-doped SiGe quantum wellsBuyanova, Chen, Henry, et al.
Physical Review. B, Condensed Matter|October 15, 1995
Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxyBuyanova, Chen, Henry, et al.
Physical Review. B, Condensed Matter|August 15, 1991
Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1-xAs quantum wellRune, Holtz, Sundaram, et al.
Physical Review. B, Condensed Matter|June 15, 1993
Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum wellHoltz, Zhao, Monemar, et al.
Physical Review Letters|November 20, 1995
Chen et al. replyChen, Monemar, Janzén, et al.
Physical Review Letters|December 12, 1994
Direct determination of the electron-electron-hole Auger threshold energy in siliconChen, Monemar, Janzén, et al.
Pageof 12

Showing results (71-80 of 120) with videos related to

Sort By:
Pageof 12
Physical Review. B, Condensed Matter|August 15, 1994
Binding energies and diamagnetic shifts for free excitons in symmetric coupled double quantum wellsZhao, Monemar, Holtz, et al.
Physical Review. B, Condensed Matter|January 15, 1995
Optically detected magnetic-resonance study of a metastable selenium-related center in siliconSörman, Chen, Henry, et al.
Physical Review. B, Condensed Matter|August 15, 1994
Shake-up intersubband processes in quantum-well luminescenceHoltz, Zhao, Monemar, et al.
Physical Review. B, Condensed Matter|April 15, 1996
Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layersBuyanova, Chen, Henry, et al.
Physical Review. B, Condensed Matter|January 15, 1996
Fermi-edge singularity in p-type modulation-doped SiGe quantum wellsBuyanova, Chen, Henry, et al.
Physical Review. B, Condensed Matter|October 15, 1995
Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxyBuyanova, Chen, Henry, et al.
Physical Review. B, Condensed Matter|August 15, 1991
Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1-xAs quantum wellRune, Holtz, Sundaram, et al.
Physical Review. B, Condensed Matter|June 15, 1993
Electronic structure of a shallow acceptor confined in a GaAs/AlxGa1-xAs quantum wellHoltz, Zhao, Monemar, et al.
Physical Review Letters|November 20, 1995
Chen et al. replyChen, Monemar, Janzén, et al.
Physical Review Letters|December 12, 1994
Direct determination of the electron-electron-hole Auger threshold energy in siliconChen, Monemar, Janzén, et al.
Pageof 12