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Monemar

Showing results (81-90 of 120) with videos related to

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Physical Review Letters|May 22, 1995
Comment on "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well"Holtz, Zhao, Harris, et al.
Physical Review. B, Condensed Matter|September 15, 1990
Photoluminescence study of radiative channels in ion-implanted siliconAwadelkarim, Henry, Monemar, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Optical properties of complex defects created by Ag diffusion in ZnTeMonemar, Holtz, Gislason, et al.
Physical Review. B, Condensed Matter|December 15, 1986
Optical properties and excitation-induced distortions of a trigonal Cu-related neutral complex with a bound exciton at 2.26 eV in ZnTeMonemar, Holtz, Chen, et al.
Physical Review. B, Condensed Matter|July 15, 1994
Magnetic-resonance studies of tellurium-doped AlxGa1-xAsSurma, Zytkiewicz, Fronc, et al.
Physical Review. B, Condensed Matter|September 15, 1994
Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1-xAs heterostructuresZhao, Monemar, Holtz, et al.
Physical Review. B, Condensed Matter|May 15, 1993
Mercury-related luminescent center in siliconHenry, Monemar, Bergman, et al.
Physical Review. B, Condensed Matter|December 15, 1996
Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wellsFerreira, Holtz, Monemar, et al.
Physical Review. B, Condensed Matter|May 15, 1995
Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wellsHarris, Monemar, Kalt, et al.
Physical Review. B, Condensed Matter|September 15, 1993
Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wellsHoltz, Zhao, Ferreira, et al.
Pageof 12

Showing results (81-90 of 120) with videos related to

Sort By:
Pageof 12
Physical Review Letters|May 22, 1995
Comment on "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well"Holtz, Zhao, Harris, et al.
Physical Review. B, Condensed Matter|September 15, 1990
Photoluminescence study of radiative channels in ion-implanted siliconAwadelkarim, Henry, Monemar, et al.
Physical Review. B, Condensed Matter|September 15, 1985
Optical properties of complex defects created by Ag diffusion in ZnTeMonemar, Holtz, Gislason, et al.
Physical Review. B, Condensed Matter|December 15, 1986
Optical properties and excitation-induced distortions of a trigonal Cu-related neutral complex with a bound exciton at 2.26 eV in ZnTeMonemar, Holtz, Chen, et al.
Physical Review. B, Condensed Matter|July 15, 1994
Magnetic-resonance studies of tellurium-doped AlxGa1-xAsSurma, Zytkiewicz, Fronc, et al.
Physical Review. B, Condensed Matter|September 15, 1994
Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1-xAs heterostructuresZhao, Monemar, Holtz, et al.
Physical Review. B, Condensed Matter|May 15, 1993
Mercury-related luminescent center in siliconHenry, Monemar, Bergman, et al.
Physical Review. B, Condensed Matter|December 15, 1996
Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wellsFerreira, Holtz, Monemar, et al.
Physical Review. B, Condensed Matter|May 15, 1995
Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wellsHarris, Monemar, Kalt, et al.
Physical Review. B, Condensed Matter|September 15, 1993
Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wellsHoltz, Zhao, Ferreira, et al.
Pageof 12