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ACS Nano|May 25, 2016
Large-Area Deposition of MoS2 by Pulsed Laser Deposition with In Situ Thickness ControlMartha I Serna, Seong H Yoo, Salvador Moreno, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 12, 2019
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low TemperatureChun-Li Lo, Massimo Catalano, Ava Khosravi, et al.
Nanotechnology|March 13, 2025
Bismuth oxychloride as avan der Waalsdielectric for 2D electronicsAswin L N Kondusamy, Wenhao Liu, Joy Roy, et al.
ACS Nano|February 23, 2012
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozoneSrikar Jandhyala, Greg Mordi, Bongki Lee, et al.
ACS Nano|June 19, 2012
Toward the controlled synthesis of hexagonal boron nitride filmsAriel Ismach, Harry Chou, Domingo A Ferrer, et al.
Nano Letters|August 6, 2016
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma ExposureAngelica Azcatl, Xiaoye Qin, Abhijith Prakash, et al.
Science (New York, N.Y.)|November 16, 2016
MoS2 transistors with 1-nanometer gate lengthsSujay B Desai, Surabhi R Madhvapathy, Angada B Sachid, et al.
ACS Applied Materials & Interfaces|July 16, 2020
Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D ElectronicsJaebeom Lee, Arul V Ravichandran, Jaidah Mohan, et al.
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