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Moonsang Lee

Showing results (1-10 of 26) with videos related to

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RSC Advances|May 13, 2022
Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxyMoonsang Lee, Sungsoo Park
RSC Advances|May 11, 2022
The investigation of <i>in situ</i> removal of Si substrates for freestanding GaN crystals by HVPEMoonsang Lee, Dmitry Mikulik, Sungsoo Park
Scientific Reports|August 19, 2017
The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPEMoonsang Lee, Dmitry Mikulik, Mino Yang, et al.
Nanomaterials (Basel, Switzerland)|July 20, 2018
Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si SubstrateMoonsang Lee, Hyunkyu Lee, Keun Man Song, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 26, 2020
In Situ Visualization of Localized Surface Plasmon Resonance-Driven Hot Hole FluxHyunhwa Lee, Kyoungjae Song, Moonsang Lee, et al.
Scientific Reports|February 1, 2019
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodesMoonsang Lee, Hyun Uk Lee, Keun Man Song, et al.
Nanomaterials (Basel, Switzerland)|June 6, 2018
Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot FormationMoonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, et al.
Nano Letters|July 4, 2018
Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial GaNMoonsang Lee, Hionsuck Baik, Wontaek Ryu, et al.
Science Advances|March 7, 2025
Reconfiguring hot-hole flux via polarity modulation of p-GaN in plasmonic Schottky architecturesHyunhwa Lee, Yujin Park, Sanghee Nah, et al.
Scientific Reports|May 20, 2018
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPEMoonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, et al.
Pageof 3

Showing results (1-10 of 26) with videos related to

Sort By:
Pageof 3
RSC Advances|May 13, 2022
Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxyMoonsang Lee, Sungsoo Park
RSC Advances|May 11, 2022
The investigation of <i>in situ</i> removal of Si substrates for freestanding GaN crystals by HVPEMoonsang Lee, Dmitry Mikulik, Sungsoo Park
Scientific Reports|August 19, 2017
The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPEMoonsang Lee, Dmitry Mikulik, Mino Yang, et al.
Nanomaterials (Basel, Switzerland)|July 20, 2018
Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si SubstrateMoonsang Lee, Hyunkyu Lee, Keun Man Song, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|October 26, 2020
In Situ Visualization of Localized Surface Plasmon Resonance-Driven Hot Hole FluxHyunhwa Lee, Kyoungjae Song, Moonsang Lee, et al.
Scientific Reports|February 1, 2019
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodesMoonsang Lee, Hyun Uk Lee, Keun Man Song, et al.
Nanomaterials (Basel, Switzerland)|June 6, 2018
Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot FormationMoonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, et al.
Nano Letters|July 4, 2018
Partial Edge Dislocations Comprised of Metallic Ga Bonds in Heteroepitaxial GaNMoonsang Lee, Hionsuck Baik, Wontaek Ryu, et al.
Science Advances|March 7, 2025
Reconfiguring hot-hole flux via polarity modulation of p-GaN in plasmonic Schottky architecturesHyunhwa Lee, Yujin Park, Sanghee Nah, et al.
Scientific Reports|May 20, 2018
Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPEMoonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, et al.
Pageof 3